Role of cross-slipping in formation of edge dislocations in heteroepitaxial systems GeSi-on-Si(001) and Ge-on-InGaAs/GaAs

Yu.B. Bolkhovityanov; A.S. Deryabin; A.K. Gutakovskii

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Role of cross-slipping in formation of edge dislocations in heteroepitaxial systems GeSi-on-Si(001) and Ge-on-InGaAs/GaAs

机译：交叉滑移在异质外延体系GeSi-on-Si（001）和Ge-on-InGaAs / GaAs中边缘位错形成中的作用

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Edge misfit dislocations (MDs) formed as result of reactions between 60° glissile threading dislocations and 60° MDs lying on an intersecting glide plane were found in strained GeSi-on-Si(OOl) and Ge-on-InGaAs/GaAs films. It was demonstrated that dislocations penetrating from the InGaAs buffer layer to the strained Ge film can provoke formation of not only 60° MDs, but also edge MDs on the interface even at minor mismatch of the lattice parameters of the film and the InGaAs/GaAs virtual substrate.

机译：在应变的GeSi-on-Si（OOl）和Ge-on-InGaAs / GaAs薄膜中发现了由于60°易弯曲螺纹位错与位于相交滑行平面上的60°MD之间的反应而形成的边缘失配位错（MDs）。结果表明，从InGaAs缓冲层到应变Ge膜的位错渗透不仅会引起60°MD的形成，而且还会引起界面上的边缘MD的形成，即使膜的晶格参数与InGaAs / GaAs虚构的配比很小。基质。

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《Philosophical Magazine Letters》 |2011年第8期|共7页
作者
Yu.B. Bolkhovityanov; A.S. Deryabin; A.K. Gutakovskii;
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正文语种 eng
中图分类物理学;
关键词
misfit dislocations; edge dislocations; molecular-beam epitaxy; germanium silicon alloys; tensiled Ge;

机译：错位错;边缘错位;分子束外延;锗硅合金;拉伸锗;

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1. Role of cross-slipping in formation of edge dislocations in heteroepitaxial systems GeSi-on-Si(001) and Ge-on-InGaAs/GaAs [J] . Yu.B. Bolkhovityanova* A.S. Deryabina A.K. Gutakovskiia amp, L.V. Sokolova Philosophical Magazine Letters . 2011,第7期

机译：交叉滑移在异质外延体系GeSi-on-Si（001）和Ge-on-InGaAs / GaAs中边缘位错形成中的作用
2. Edge misfit dislocations in Ge_xSi_(1 - x)/Si(001) (x ~ 1) heterostructures: Role of buffer Ge_ySi_(1 - y) (y < x) interlayer in their formation [J] . Bolkhovityanov Y.B., Gutakovskii A.K., Deryabin A.S., Physics of the solid state . 2011,第9期

机译：Ge_xSi_（1-x）/ Si（001）（x〜1）异质结构中的边缘失配位错：缓冲Ge_ySi_（1- y）（y
3. Role of Edge and Screw Dislocations in Composite System on the Plastic Deformation of Metals [J] . Jian JIANG, Chiwei LUNG Journal of Materials Science & Technology . 1996,第1期

机译：复合材料体系中刃钉错位在金属塑性变形中的作用
4. Dislocation half loop formation in GaSb/(001)GaAs islands and steps role: a Monte Carlo simulation [C] . J. Dalla Torre, M. Djafari Rouhani, G. Landa, Thin films epitaxial growth and nanostructures . 1998

机译：GaSb /（001）GaAs岛和台阶中位错半环的形成：蒙特卡罗模拟
5. Multispectral edge detection and its application to feature classification, image matching and geographic information systems (GIS). [D] . Githuku, Anthony Waruri. 1997

机译：多光谱边缘检测及其在特征分类，图像匹配和地理信息系统（GIS）中的应用。
6. Atomic Scale Formation Mechanism of Edge Dislocation Relieving Lattice Strain in a GeSi overlayer on Si(001) [O] . E. Maras, L. Pizzagalli, T. Ala-Nissila, -1

机译：Si（001）上GeSi覆盖层中位错释放晶格应变的原子尺度形成机理
7. Selective Electrochemical Profiling of Threading Dislocations in Mismatched InGaAs/GaAs Heteroepitaxial Systems [O] . A. Nemcsics, Aâ Nemcsics, F. Riesz, 1999

机译：不匹配InGaas / Gaas异质外延系统中穿线位错的选择性电化学分析

Role of cross-slipping in formation of edge dislocations in heteroepitaxial systems GeSi-on-Si(001) and Ge-on-InGaAs/GaAs

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