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首页> 外文期刊>Philosophical magazine, B. Physics of condensed matter, electronic, optical, and magnetic properties >Device-quality polycrystalline and amorphous silicon films by hot-wire chemical vapour deposition
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Device-quality polycrystalline and amorphous silicon films by hot-wire chemical vapour deposition

机译：通过热线化学气相沉积获得器件质量的多晶硅和非晶硅膜

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摘要

We describe how high-quality intrinsic hydrogenated amorphous silicon (a-Si:H), as well as purely intrinsic single-phase hydrogenated polycrystalline silicon (poly-Si:H), can be obtained by hot-wire chemical vapour deposition (HWCVD). The deposition parameter space for these different thin-him materials has been optimized in the same hot-wire deposition chamber. A review of the earlier work shows how such high-quality films at both ends of the amorphous-crystalline scale have evolved. We incorporated both the amorphous and the polycrystalline silicon films in n-i-p solar cells and thin-film transistors (TFTs). The solar cells, with efficiencies in excess of 3%, confirm the material quality of both the a-Si:H and the poly-Si:H i-layer materials, but more work is needed to improve the interfaces with the doped layers. The TFTs made with a-Si:H and poly-Si:H channels show quite similar characteristics, such as a field-effect mobility of 0.5 cm(2) V-1 s(-1), indicating that the channel region has amorphouslike character with a quality similar to that of state-of-the-art plasma-deposited a-Si:H TFTs. However, in contrast with plasma-deposited a-Si:H TFTs, the present HWCVD TFTs show no deterioration upon prolonged voltage bias stressing.
机译：我们描述了如何通过热线化学气相沉积（HWCVD）获得高质量的本征氢化非晶硅（a-Si：H）以及纯本征单相氢化多晶硅（poly-Si：H） 。在相同的热线沉积室中，已优化了这些不同的薄合金材料的沉积参数空间。对早期工作的回顾表明，非晶态晶体两端的高质量薄膜是如何演变的。我们在n-i-p太阳能电池和薄膜晶体管（TFT）中结合了非晶硅膜和多晶硅膜。效率超过3％的太阳能电池证实了a-Si：H和多晶硅i：H i层材料的材料质量，但是需要做更多的工作来改善与掺杂层的界面。用a-Si：H和poly-Si：H沟道制成的TFT表现出非常相似的特性，例如0.5 cm（2）V-1 s（-1）的场效应迁移率，表明沟道区具有非晶态具有与最新的等离子沉积a-Si：H TFT相似的质量。然而，与等离子体沉积的a-Si：H TFT相反，本发明的HWCVD TFT在长时间的电压偏置应力下没有表现出劣化。

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