• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Philosophical magazine, B. Physics of condensed matter, electronic, optical, and magnetic properties >Thermal modification of wide-bandgap hydrogenated amorphous silicon-carbon alloy films grown by plasma-enhanced chemical vapour deposition from C2H2+SiH4 mixtures
【24h】

Thermal modification of wide-bandgap hydrogenated amorphous silicon-carbon alloy films grown by plasma-enhanced chemical vapour deposition from C2H2+SiH4 mixtures

机译：通过等离子体增强化学气相沉积法从C2H2 + SiH4混合物中生长的宽带隙氢化非晶硅碳合金薄膜的热改性

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The thermal stability of hydrogenated amorphous silicon-carbon (aSi(1-x)C(x):H) alloy films grown by plasma-enhanced chemical vapour deposition from C2H2+SiH4 mixtures was characterized by means of infrared spectroscopy, electron spin resonance, transmittance-reflectance spectroscopy and photoluminescence (PL) spectroscopy. It is demonstrated that the network undergoes relaxation and reconstruction under the condition of low-temperature annealing. Weak C-C, Si-Si and C-Si bonds will be broken, and a new stage of hydrogen effusion and structural rearrangement will occur under the condition of high-temperature annealing. The thermal stability a-Si1-xCx:H of films increases with increase in carbon content. In carbon-poor a-Si1-xCx:H networks, the dangling bonds are the main non-radiative recombination channel, which causes a strong correlation of the PL signal with defect density. In carbon-rich a-Si1-xCx:H networks, pi-bonded clusters play an important role in the luminescence process. The PL intensity has little dependence on defects in carbon-rich a-Si1-xCx:H.
机译：通过红外光谱法，电子自旋共振，电子自旋共振，热定性等方法表征了通过等离子体增强化学气相沉积从C2H2 + SiH4混合物中生长的氢化非晶硅碳（aSi（1-x）C（x）：H）合金膜的热稳定性透射-反射光谱和光致发光（PL）光谱。结果表明，在低温退火条件下，网络经历了弛豫和重构。弱的C-C，Si-Si和C-Si键将被破坏，并且在高温退火的条件下将发生新的氢渗出和结构重排的阶段。膜的热稳定性a-Si1-xCx：H随着碳含量的增加而增加。在贫碳的a-Si1-xCx：H网络中，悬空键是主要的非辐射复合通道，这导致PL信号与缺陷密度密切相关。在富含碳的a-Si1-xCx：H网络中，π键簇在发光过程中起着重要作用。 PL强度对富碳a-Si1-xCx：H中的缺陷几乎没有依赖性。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号