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首页> 外文期刊>Physica Scripta: An International Journal for Experimental and Theoretical Physics >A base-collector architecture for SiGeHBTs using low-temperature CVD epitaxy combined with chemical-mechanical polishing
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A base-collector architecture for SiGeHBTs using low-temperature CVD epitaxy combined with chemical-mechanical polishing

机译：使用低温CVD外延和化学机械抛光的SiGeHBT基极-集电极体系结构

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摘要

A new collector technology intended for an integrated high-speed SiGe heterojunction bipolar transistor (HBT) is reported. The collector was fabricated by selective epitaxial growth (SEG) using chemical vapor deposition at 770degreesC under reduced pressure (20 torr) using SiH2Cl2 as silicon precursor and PH3 as n-type dopant source. Chemical-mechanical polishing (CMP) was applied to the overgrown SEG collector in order to achieve a smooth surface in level with the surrounding oxide. Finally, a SiGe base doped with boron was deposited using non-selective epitaxial growth (NSEG) at 650degreesC. The topography of the collector is inspected after each process step by atomic force microscopy and the topography of the completed collector/base stack indicates that this structure is promising for fabrication of the emitter window. A further advantage with the CMP procedure is the elimination of phosphorous segregation as evidenced by secondary ion mass spectroscopy of the base-collector stack. [References: 9]
机译：据报道，一种新的集电极技术旨在用于集成高速SiGe异质结双极晶体管（HBT）。通过使用SiH2Cl2作为硅前驱体和PH3作为n型掺杂剂源，在770°C减压（20 torr）下化学气相沉积，通过选择性外延生长（SEG）制备集电极。将化学机械抛光（CMP）应用于长满的SEG收集器，以实现与周围氧化物齐平的光滑表面。最后，使用非选择性外延生长（NSEG）在650摄氏度下沉积了掺硼的SiGe基。在每个处理步骤之后，通过原子力显微镜检查收集器的形貌，并且完成的收集器/基堆的形貌表明该结构有望用于制造发射器窗口。 CMP程序的另一个优点是消除了磷的偏析，这通过基极-集电极堆的二次离子质谱法得到了证明。 [参考：9]

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