Gain characteristics of self-assembled InAs/GaAs quantum dots

Arzberger M.; Amann MC.; Abstreiter G.; Bohm G.

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Gain characteristics of self-assembled InAs/GaAs quantum dots

机译：自组装InAs / GaAs量子点的增益特性

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The gain characteristics of stacked self-assembled InAs/GaAs quantum dots (QDs) with an inhomogeneous broadening of the order of 100 meV are studied in comparison to an InGaAs quantum well. The QDs exhibit gain already at low current densities of similar to 25 Acm(-2) per QD layer! but the peak gain rises slowly with increasing current density The energy of the peak gain is shifted from the low energy tail of the QD emission at low injection towards the wetting-layer at high injection. [References: 7]

机译：与InGaAs量子阱相比，研究了堆叠的自组装InAs / GaAs量子点（QDs）的增益特性，该量子点具有100 meV数量级的不均匀扩展。这些QD在低电流密度下已显示出增益，类似于每个QD层25 Acm（-2）！但是峰值增益随电流密度的增加而缓慢上升。峰值增益的能量从低注入时QD发射的低能量尾部转移到高注入时的润湿层。 [参考：7]

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《Physica status solidi, B. Basic research》 |2001年第3期|共5页
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Arzberger M.; Amann MC.; Abstreiter G.; Bohm G.;
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中图分类固体物理学;
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1. Gain characteristics of self-assembled InAs/GaAs quantum dots [J] . Arzberger M., Amann MC., Abstreiter G., Physica status solidi, B. Basic research . 2001,第3期

机译：自组装InAs / GaAs量子点的增益特性
2. Photoluminescence characteristics of InAs self-assembled quantum dots in InGaAs/GaAs quantum well [J] . Lingmin Kong, Zhengyun Wu, Zhe Chuan Feng, Journal of Applied Physics . 2007,第12期

机译：InGaAs / GaAs量子阱中InAs自组装量子点的光致发光特性
3. Deep levels in GaAs(001)/InAs/InGaAs/GaAs self-assembled quantum dot structures and their effect on quantum dot devices [J] . Asano Tetsuya, Fang Zhaoqiang, Madhukar Anupam Journal of Applied Physics . 2010,第7期

机译：GaAs（001）/ InAs / InGaAs / GaAs自组装量子点结构中的深能级及其对量子点器件的影响
4. MBE GROWTH AND CHARACTERISTICS OF SELF-ASSEMBLED InAs/InGaAs/GaAs QUANTUM DOTS [C] . C. Y. Park, J. M. Kim, Y. T. Lee International Conference on Indium Phosphide and Related Materials . 2007

机译：MBE自组装INAS / INGAAS / GAAs量子点的成长和特点
5. Self-Assembled InAs/GaAs/ Quantum Dot Solar Cells. [D] . Li, Tian. 2015

机译：自组装的InAs / GaAs /量子点太阳能电池。
6. Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot [O] . Tarek A Ameen, Hesameddin Ilatikhameneh, Archana Tankasala, 2018

机译：掺杂的自组装InAs / InGaAs / GaAs / AlGaAs量子点中应变相关的光吸收的理论研究
7. Electronic structure of self-assembled InAs/InP quantum dots: A Comparison with self-assembled InAs/GaAs quantum dots [O] . Gong, Ming, Duan, Kaimin, Li, Chuan-Feng, 2007

机译：自组装Inas / Inp量子点的电子结构：a 与自组装Inas / Gaas量子点的比较

Gain characteristics of self-assembled InAs/GaAs quantum dots

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