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首页> 外文期刊>Physica status solidi, B. Basic research >Field emission from single-wall nanotubes obtained from carbon and boron nitride mixtures
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Field emission from single-wall nanotubes obtained from carbon and boron nitride mixtures

机译:从碳和氮化硼混合物获得的单壁纳米管的场发射

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Heterophase BN:C single-wall nanotubes are prospective as a material with a predicted possibility to vary the bandgap via changing a relative content of BN and C fractions in the nanotube walls. The challenge is both to find the ways of synthesis of such nanotubes and, in case of success, to confirm BN embedding. In this work field emission studies have been performed for revealing the difference between arc-produced pure carbon nanotubes and nanotubes grown from BN:C mixtures. The relative BN content in the mixtures was varied from 0% up to 50% (by mass). The materials have been characterized by a high resolution transmission electron microscopy, Raman scattering and UV-VIS-NIR optical adsorption techniques. The single-wall nanotubes have been revealed in all samples synthesized, but their composition remained questionable. The field emission properties of the samples have been examined in a vacuum diode configuration. It has been found that the threshold fields and slops of the Fowler-Nordheim plot, evaluated from the measured current-voltage dependences, increased with an enrichment of the starting mixtures with h-BN. This increase could be attributed to the work function rise due to h-BN embedding into the carbon nanotube walls. This result opens a way to use the field-emission characterization for an indirect confirmation of the heterophase BN:C nanotube formation. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
机译:异相BN:C单壁纳米管有望作为一种材料,通过改变纳米管壁中BN和C组分的相对含量来改变带隙。挑战在于既要找到这种纳米管的合成方法,又要成功地确定BN嵌入。在这项工作中,已经进行了场发射研究,以揭示电弧产生的纯碳纳米管与从BN:C混合物中生长的纳米管之间的差异。混合物中的相对BN含量在0%至50%(质量)之间变化。该材料的特征在于高分辨率透射电子显微镜,拉曼散射和UV-VIS-NIR光学吸附技术。单壁纳米管已经在所有合成的样品中显示出来,但是它们的组成仍然值得怀疑。已经在真空二极管配置中检查了样品的场发射特性。已经发现,从所测量的电流-电压依赖性评估的Fowler-Nordheim图的阈值场和斜率随着h-BN的起始混合物的富集而增加。该增加可以归因于由于h-BN嵌入到碳纳米管壁中而导致的功函数上升。该结果为利用场发射表征间接证实异相BN:C纳米管的形成开辟了道路。 (C)2008 WILEY-VCH Verlag GmbH&Co.KGaA,Weinheim

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