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首页> 外文期刊>Physica status solidi, B. Basic research >Influence of thiol coupling on photoluminescence of near surface InAs quantum dots
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Influence of thiol coupling on photoluminescence of near surface InAs quantum dots

机译：硫醇偶联对近表面InAs量子点光致发光的影响

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Photoluminescence (PL) of near surface InAs quantum dots (QDs) has been studied as a function of the distance to the surface (30, 20, 10, 6 nm). We observe a strong decrease in the QD PL intensity with decreasing barrier thickness. Nevertheless the QDs still show reasonably strong PL intensity even when they are only 10 nm beneath the surface. After tile deposition of self-assemble;I monolayers of octadecylthiol, we observe an increase ill PL intensity up to a factor of 1.87. Such an enhancement is attributed to a decrease in the density of surface states. This demonstrates that near surface InAs QDs ale very sensitive to changes of the surface conditions and the deposition of octadecylthiol monolayer may be used to increase, their sensitivity which is promising toward future bio-sensor applications. [References: 16]
机译：已经研究了近表面InAs量子点（QD）的光致发光（PL），它是与表面（30、20、10、6 nm）距离的函数。我们观察到QD PL强度随着势垒厚度的减小而大大降低。然而，尽管量子点仅在表面以下10 nm处，它们仍显示出相当强的PL强度。经过自组装的沉积; I单层的十八烷基硫醇，我们观察到病态PL强度增加到1.87倍。这种增强归因于表面态密度的降低。这表明对表面条件的变化非常敏感的近表面InAs量子点可能会增加十八烷基硫醇单层的沉积，并且其灵敏度可用于未来的生物传感器应用。 [参考：16]

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