Growth of bulk GaN on GaN/sapphire templates by a high N-2 pressure method

Bockowski M; Grzegory I; Lucznik B; Krukowski S; Wroblewski M; Kwiatkowski P; Jasik K; Wawer W; Borysiuk J; Kamler G

首页> 外文期刊>Physica status solidi, B. Basic research >Growth of bulk GaN on GaN/sapphire templates by a high N-2 pressure method

【24h】

Growth of bulk GaN on GaN/sapphire templates by a high N-2 pressure method

机译：高N-2压力法在GaN /蓝宝石模板上生长块状GaN

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

The results of high-pressure directional growth of GaN on GaN/sapphire templates are presented. The GaN growth rate as a function of the temperature gradient and time is determined. Changes of the growth rate with time are explained. The results of the crystallization process are briefly compared with those obtained for directional growth on pressure-grown GaN crystals. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

机译：提出了在GaN /蓝宝石模板上进行GaN高压定向生长的结果。确定作为温度梯度和时间的函数的GaN生长速率。解释了增长率随时间的变化。将结晶过程的结果与在压力生长的GaN晶体上定向生长获得的结果进行了简要比较。（C）2004 WILEY-VCH Verlag GmbH＆Co. KGaA，Weinheim。

著录项

来源
《Physica status solidi, B. Basic research》 |2004年第12期|共4页
作者
Bockowski M; Grzegory I; Lucznik B; Krukowski S; Wroblewski M; Kwiatkowski P; Jasik K; Wawer W; Borysiuk J; Kamler G;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类固体物理学;
关键词
HVPE;

机译：高压聚乙烯;

相似文献

外文文献
中文文献
专利

1. Growth of bulk GaN on GaN/sapphire templates by a high N-2 pressure method [J] . Bockowski M, Grzegory I, Lucznik B, Physica status solidi, B. Basic research . 2004,第12期

机译：高N-2压力法在GaN /蓝宝石模板上生长块状GaN
2. Deposition of bulk GaN from solution in gallium under high N-2 pressure on silicon carbide and sapphire substrates [J] . Bochowski M, Grzegory I, Krukowski S, Journal of Crystal Growth . 2004,第3a4期

机译：在高N-2压力下在碳化硅和蓝宝石衬底上从镓溶液中沉积块状GaN
3. Growth of GaN and GaN/AIN multiple quantum wells on sapphire, Si and GaN template by molecular beam epitaxy [J] . X.Y. Liu, P. Jaenes, P. Holmstroem, Journal of Crystal Growth . 2007,第1期

机译：通过分子束外延在蓝宝石，Si和GaN模板上生长GaN和GaN / AIN多量子阱
4. Growth of bulk GaN on GaN/sapphire templates by a high N_2 pressure method [C] . M. Bockowski, I. Grzegory, B. Lucznik, International Symposium on Blue Laser and Light Emitting Diodes . 2004

机译：通过高N_2压力法在GaN / Sapphire模板上的散装GaN的生长
5. Electron Microscopy Characterization of GaN-on-GaN Vertical Power Devices =Electron Microscopy Characterization of GaN-on-GaN Vertical Power Devices [D] . Peri, Prudhvi Ram. 2021

机译：GaN-On-GaN垂直功率器件的电子显微镜表征= GaN-On-GaN垂直功率器件的电子显微镜表征
6. High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates [O] . Idriss Abid, Riad Kabouche, Catherine Bougerol, 2019

机译：AlN /蓝宝石模板上的薄沟道AlGaN / GaN高电子迁移率晶体管中的高横向击穿电压
7. Highly c-axis oriented growth of GaN film on sapphire (0001) by laser molecular beam epitaxy using HVPE grown GaN bulk target [O] . S. S. Kushvaha, M. Senthil Kumar, K. K. Maurya, 2013

机译：使用HVpE生长的GaN体靶通过激光分子束外延在钴蓝（0001）上高度c轴取向生长GaN膜

Growth of bulk GaN on GaN/sapphire templates by a high N-2 pressure method

摘要

著录项

相似文献

相关主题

期刊订阅