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Preparation of SrTiO3 buffer layers on BaxSr1-xTiO3 seed layers buffered Ni tapes by chemical solution deposition

机译:通过化学溶液沉积法在BaxSr1-xTiO3种子层缓冲镍带上制备SrTiO3缓冲层

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摘要

SrTiO3 (STO) buffer layers were prepared via chemical solution deposition (CSD) on different BaxSr1-xTiO3 (BST, x = 0, 0.3, 0.5) seed layers buffered Ni(200) tapes. It was found that (200) texture of the STO buffer layer was the best when the seed layer was Ba0.3Sr0.7TiO3. Additionally, the annealing temperature effects on the textures of STO(200) buffer layers were also studied, it was found that the STO buffer layers showed the best (2 0 0) texture when the annealing temperature was 900 degreesC. (C) 2004 Elsevier B.V. All rights reserved.
机译:通过化学溶液沉积(CSD)在不同的BaxSr1-xTiO3(BST,x = 0,0.3,0.5)种子层缓冲的Ni(200)带上化学溶液沉积(CSD)制备SrTiO3(STO)缓冲层。发现当种子层为Ba0.3Sr0.7TiO3时,STO缓冲层的(200)织构是最好的。此外,还研究了退火温度对STO(200)缓冲层纹理的影响,发现当退火温度为900℃时,STO缓冲层表现出最佳的(2 0 0)纹理。 (C)2004 Elsevier B.V.保留所有权利。

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