...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Physica, C. Superconductivity and its applications >High critical-current density and ultra high-voltage TEM study of filamentary 0.1 at% Zr-doped (Nd0.33Eu0.38Gd0.28)Ba2CU3Ox superconductors
【24h】

High critical-current density and ultra high-voltage TEM study of filamentary 0.1 at% Zr-doped (Nd0.33Eu0.38Gd0.28)Ba2CU3Ox superconductors

机译：掺0.1at％Zr的丝状（Nd0.33Eu0.38Gd0.28）Ba2CU3Ox超导体的高临界电流密度和超高压TEM研究

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

We prepared filamentary 0.1 at% Zr-doped (Nd0.33Eu0.38Gd0.28)Ba2Cu3Ox superconductors by solution spinning and partial melting in flowing 0-1% O-2 + Ar gas. The transport critical-current density (J(c)) was measured at 77 K in applied magnetic fields up to 14 T by rotating the sample along a direction perpendicular to the filament length. Anisotropic behavior of the field dependence of J(c) was detected by applying a field of more than 4 T. The J(c) values for the Zr-doped sample were higher than those for the undoped sample on the application of fields of up to 11 T. The J(c) values measured at the optimized angle for the doped sample were more than 10(5) A/cm(2) at 77 K by applying fields of up to 6 T. Transmission electron microscopy (TEM) of the sample was performed using an ultra high-voltage TEM to clarify the pinning centers. Intergrowth of 124 phase and stacking faults in the oriented 123 matrix were observed both for the doped and undoped samples. Zr doping resulted in the fluctuation of the structure with a short disorder range of 10-30 nm. A modulated structure and fine twin planes crossing each other were partly observed for the doped sample. The presence of such small-scale disorder could improve flux pinning in the middle field region. (c) 2005 Elsevier B.V. All rights reserved.
机译：我们通过溶液纺丝和在0-1％O-2 + Ar气中流动部分熔融，制备了0.1at％Zr掺杂（Nd0.33Eu0.38Gd0.28）Ba2Cu3Ox丝状超导体。通过沿垂直于灯丝长度的方向旋转样品，在高达14 T的施加磁场下，在77 K下测量运输临界电流密度（J（c））。通过施加大于4 T的电场来检测J（c）的场相关性的各向异性行为。在施加90场以上的磁场时，掺Zr样品的J（c）值高于未掺杂样品的J（c）值。到11T。通过施加最高达6 T的电场，在77 K时，以最佳角度对掺杂样品测量的J（c）值大于10（5）A / cm（2）。透射电子显微镜（TEM）使用超高压TEM进行样品定性，以弄清钉扎中心。无论是掺杂样品还是未掺杂样品，在取向的123矩阵中都观察到124相的共生和堆积缺陷。 Zr掺杂导致结构的波动，无序范围为10-30 nm。对于掺杂样品，部分观察到调制的结构和彼此交叉的精细孪晶面。这种小规模无序现象的存在可以改善中场区域的磁通钉扎。 （c）2005 Elsevier B.V.保留所有权利。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号