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Investigation of a Hybrid Wafer Scale Integration Technique that Mounts Discrete Integrated Circuit Die in a Silicon Substrate

机译：一种在硅衬底中安装离散集成电路芯片的混合晶圆级集成技术研究

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This study investigates a hybrid method of Wafer Scale Integration (WSI) which involves mounting discrete integrated circuit die into etched wells of a silicon wafer substrate, aligning the top surfaces of both the die and the silicon substrate, planarizing the gap between the die and the substrate, applying a conformal, dielectric smoothing layer, and finally, interconnecting the die utilizing a thin-film metallization conductor pattern. The study establishes a fabrication process by which functional integrated circuit die can be close-mounted and reliably interconnected with relatively low-loss conductors. The study is composed of four phases. The first phase is the Wet Orientation Directed Etching (WODE) study which investigated the suitability of two silicon orientations and three etchants for creating the die wells in the support substrate. The second phase was the Die Attach Adhesive (DAA) study which investigated the performance of several hybrid circuit attachment adhesives for mounting the die in the wells of the substrate. The third phase involved the preparation of final samples for electrical performance evaluation.

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作者
Mainger, R. W.;
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年度 1988
页码 p.1-243
总页数 243
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Dies; Hybrid systems; Integrated circuits; Adhesives; Attachment; Electric conductors; Electrical properties; Etching; Fabrication; Functional analysis; Hybrid circuits; Integration; Low loss; Orientation(Direction); Preparation; Sampling; Scale; Silicon; Substrates; Te;

机译：模具;混合系统;集成电路;粘合剂;附件;电导体;电气特性;蚀刻;制造;功能分析;混合电路;集成;低损耗;方向（方向）;制备;取样;规模;硅;基板; Te;

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4. Silicon hybrid wafer scale integration (SHWSI)-a discrete integrated circuit (IC) interconnect scheme [C] . Kolesar, E.S., Takahashi, . 1995

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Investigation of a Hybrid Wafer Scale Integration Technique that Mounts Discrete Integrated Circuit Die in a Silicon Substrate

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