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Anodic Oxidation of Gallium Arsenide and Gallium Arsenide Phosphide.

机译：砷化镓和砷化镓磷化物的阳极氧化。

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The purpose of the work described here is twofold. The first is to study the anodization process and the resulting oxide films. The second is to examine possible applications of the oxide for encapsulation purposes. The intent of this chapter shall be to provide a brief introductory background into anodic oxidation. (Author)

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tsang,dean zensh;
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年度 1975
页码 1-49
总页数 49
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Gallium arsenides; Anodic coatings; Oxidation; Gallium phosphides; Oxides; Films; Refractive index; Dielectric properties; Annealing; High temperature; Anodic oxidation; Anodization;

机译：砷化镓;阳极涂层;氧化;磷化镓;氧化物;薄膜;折射率;介电性能;退火;高温;阳极氧化;阳极氧化;

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专利

1. An energetic study on the formation of self-assembled indium arsenide nanostructures grown on indium gallium arsenide/indium phosphide and gallium arsenide substrates [J] . F Shi, Kuo-Lih Chang, K C Hsieh Proceedings of the Institution of Mechanical Engineers, Part N: Journal of Nanoengineering and Nanosystems . 2007,第1期

机译：在砷化铟镓/磷化铟和砷化镓衬底上生长的自组装砷化铟纳米结构形成的有力研究
2. Toxicity of indium arsenide, gallium arsenide, and aluminium gallium arsenide. [J] . Tanaka A Toxicology and Applied Pharmacology . 2004,第3期

机译：砷化铟，砷化镓和铝砷化镓的毒性。
3. Physics-based simulation study of high-performance gallium arsenide phosphide–indium gallium arsenide tunnel field-effect transistor [J] . Bhagwan Ram Raad, Dheeraj Sharma, Kaushal Nigam, Micro & Nano Letters, IET . 2016,第7期

机译：高性能砷化镓磷化物-砷化铟镓隧道场效应晶体管的基于物理的仿真研究
4. Efficiency Improvement of Three-junction Photovoltaic Cell Based on Gallium-Phosphide-Oxide,Indium-Gallium-Arsenide and Indium-Gallium-Antimonide [C] . Mir Abdulla-AI-Galib, K.M.A.Salam, Mohammad A.Awal, International conference on advanced materials research . 2012

机译：基于磷化镓，砷化铟镓和锑化铟镓的三结光伏电池效率的提高
5. Aluminum gallium arsenide-indium gallium arsenide crystal growth, buried tunnel contact lasers, wafer bonding, and alluminum gallium arsenide oxide-based VCSELs. [D] . Evans, Peter Weindel. 1998

机译：砷化铝镓-砷化镓镓晶体生长，埋入式隧道接触激光器，晶片键合以及基于砷化镓铝氧化物的VCSEL。
6. Cobalt in hard metals and cobalt sulfate gallium arsenide indium phosphide and vanadium pentoxide. [O] . -1

机译：硬金属中的钴和硫酸钴砷化镓磷化铟和五氧化二钒。
7. Optical properties of gallium arsenide/aluminum gallium arsenide and gallium aluminum indium arsenide/indium aluminum arsenide multiple quantum well and superlattice structures grown by molecular beam epitaxy. [O] . Pon Russell Michael. 1991

机译：分子束外延生长的砷化镓/铝砷化镓和砷化镓铝铟/砷化铝铝的多量子阱和超晶格结构的光学性质。
8. Annealing Studies of Beryllium in Gallium Arsenide and Gallium Arsenide Phosphide. [R] . McLevige, W. V. 1977

机译：砷化镓和砷化镓磷化物中铍的退火研究。

Anodic Oxidation of Gallium Arsenide and Gallium Arsenide Phosphide.

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