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首页> 美国政府科技报告 >Growth of Thin Hetero-Epitaxial Layers of Graphite and Diamond on SIC for Carbon Based Electronics
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Growth of Thin Hetero-Epitaxial Layers of Graphite and Diamond on SIC for Carbon Based Electronics

机译：碳基电子学在sIC上生长石墨和金刚石薄异质外延层

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During the course of this work atmospheric and UHV techniques were developed for the production of few layer graphene on the Si and C face of SiC. In was found that control of the rate of Si loss (as determined by the surface temperature gradient) was necessary to produce high quality films on both the Si and C face. The quality of these films was confirmed by AFM, Hall, Raman, and high speed laser techniques. In particular the disorder ratio as determined by Raman analysis was less than .02. The results of the growth investigations were applied to the development of a commercial graphene materials growth reactor. One monolayer self supporting films of graphene we produced by a novel technique which under etched the SiC below the formed graphene. These self supporting layers have been used in fundamental studies on the mechanical and transport properties of graphene. Using the material developed in the project graphene gas sensors have been demonstrated.

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