首页> 外文OA文献 >Total dose radiation effects on hardened SOI bipolar transistors using the NPS Linac
【2h】

Total dose radiation effects on hardened SOI bipolar transistors using the NPS Linac

机译:使用NPS Linac对硬化的SOI双极晶体管的总剂量辐射效应

摘要

Silicon-on-insulator bipolar transistors fabricated using the Harris UHF-1 process, were irradiated at room temperature with 30 and 60 MeV electron beams. Some of the transistors on each die were configured and biased as a simple operational amplifier (opamp), one was placed in a common emitter type circuit and the remaining were biased to measure transistor parameter degradation. The purpose of this setup was to observe the total dose effects of the transistor and of an opamp on the same die in order to derive a more accurate model of an opamp under total dose conditions. This investigation was successful in conducting in-situ measurements of opamp gain and 3dB frequency while also measuring the current gain of similar transistors on the same die. (MM)
机译:使用Harris UHF-1工艺制造的绝缘体上硅双极晶体管在室温下用30和60 MeV电子束照射。每个管芯上的一些晶体管被配置并偏置为一个简单的运算放大器(opamp),一个被放置在一个公共发射极型电路中,其余的被偏置以测量晶体管参数的下降。该设置的目的是观察同一管芯上晶体管和运算放大器的总剂量效应,以便在总剂量条件下得出更准确的运算放大器模型。这项研究成功地进行了运算放大器增益和3dB频率的原位测量,同时还测量了同一芯片上相似晶体管的电流增益。 (毫米)

著录项

  • 作者

    Brittain Donald R.;

  • 作者单位
  • 年度 1995
  • 总页数
  • 原文格式 PDF
  • 正文语种 en_US
  • 中图分类

相似文献

  • 外文文献
  • 中文文献
  • 专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号