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Chemical vapor deposition of fluorocarbon films for low dielectric constant thin film applications

机译：用于低介电常数薄膜应用的碳氟化合物薄膜的化学气相沉积

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Pulsed plasma enhanced and hot filament chemical vapor deposition have produced fluorocarbon films with the potential use as low dielectric constant interconnect materials in microelectronic circuits. Solid-state nuclear magnetic resonance spectroscopy was demonstrated as a valuable film characterization tool to understand structure-property processing fundamentals, quantifying film bonding environments and tracing structural instabilities. Thermal lability in fluorocarbon films was attributed to terminal end groups and low molecular weight molecules. High temperature thermal stability was achieved by minimizing such labile sources through a clean deposition of high molecular weight chains of poly(tetrafluoroethylene). Poly(tetrafluoroethylene) film porosity was introduced and controlled through the competition between nucleation and growth of film. Porous poly(tetrafluoroethylene) films were further integrated into a bridge layer and air gap dielectric interconnect scheme. With fluorocarbon materials deposited through such chemical vapor deposition methods, dielectric constants ranging from 2.1 to below 1.5 were conceivably attainable, thus potentially satisfying dielectric interconnect requirements to beyond the 0.1 [mu]m technology node.

机译：脉冲等离子体增强和热丝化学气相沉积已产生碳氟化合物薄膜，其潜在用途是微电子电路中的低介电常数互连材料。固态核磁共振波谱被证明是一种有价值的薄膜表征工具，可用于理解结构特性处理的基础知识，量化薄膜键合环境并追踪结构的不稳定性。碳氟化合物薄膜的热不稳定性归因于末端基团和低分子量分子。通过干净地沉积高分子量的聚四氟乙烯链来减少不稳定源，从而实现了高温热稳定性。通过成核与薄膜生长之间的竞争，引入并控制了聚四氟乙烯薄膜的孔隙率。将多孔聚四氟乙烯薄膜进一步集成到桥接层和气隙介电互连方案中。通过这样的化学气相沉积方法沉积的碳氟化合物材料，可以想到介电常数为2.1至低于1.5，从而潜在地满足了介电互连要求，甚至超过了0.1μm技术节点。

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Lau Kenneth Ka Shun 1972-;
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1. Preparation of low dielectric constant silicon containing fluorocarbon films by plasma enhanced chemical vapor deposition [J] . Y.Y.Jin, Kihong kim, G.S.Lee Journal of Vacuum Science & Technology. B . 2001,第1期

机译：等离子体增强化学气相沉积法制备低介电常数含硅氟碳薄膜
2. Plasma-Enhanced Chemical Vapor Deposition Growth of Fluorinated Amorphous Carbon Thin Films Using C_4F_8 and Si_2H_6/He for Low-Dielectric-Constant Intermetallic-Layer Dielectrics [J] . Howoon KIM, Jang-Kyoo SHIN, Dae-Hyuk KWON, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2005,第7A期

机译：C_4F_8和Si_2H_6 / He用于低介电常数金属间层电介质的氟化非晶碳薄膜的等离子体化学气相沉积生长
3. Effects of plasma power and deposition pressure on the properties of the low dielectric constant plasma polymerized cyclohexane thin films deposited by plasma enhanced chemical vapor deposition [J] . C. Shim, J. Yang, Y. C. Quan, Journal de Physique, IV: Proceedings of International Conference . 2001,第3期

机译：等离子体功率和沉积压力对等离子体增强化学气相沉积法沉积低介电常数等离子体聚合环己烷薄膜性能的影响
4. Effects of plasma power and deposition pressure on the properties of the low dielectric constant plasma polymerized cyclohexane thin films deposited by plasma enhanced chemical vapor deposition [C] . C. Shim, J. Yang, Y.C. Quan, European conference on chemical vapor deposition . 2001

机译：等离子体功率和沉积压力对等离子体增强化学气相沉积沉积的低介电常数等离子体聚合环己烷薄膜的影响
5. Low dielectric constant fluorocarbon films containing silicon by plasma enhanced chemical vapor deposition. [D] . Jin, Yoonyoung. 2005

机译：通过等离子体增强的含硅的低介电常数碳氟化合物薄膜增强了化学气相沉积。
6. Optimized Atmospheric-Pressure Chemical Vapor DepositionThermochromic VO2 Thin Films for Intelligent Window Applications [O] . Delphine Malarde, Michael J. Powell, Raul Quesada-Cabrera, 2017

机译：优化的常压化学气相沉积用于智能窗户应用的热致变色VO2薄膜
7. Pulsed plasma enhanced chemical vapor deposition of fluorocarbon thin films for dielectric applications [O] . Labelle Catherine B. 1972- 1999

机译：用于介电应用的脉冲等离子体增强化学气相沉积碳氟化合物薄膜

Chemical vapor deposition of fluorocarbon films for low dielectric constant thin film applications

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