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Film thickness measurement method, epitaxial wafer production process and epitaxial wafer

机译：膜厚测定方法，外延晶片的制造方法以及外延晶片

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摘要

A film thickness measurement method for measuring a change in film thickness of 0.3 μm or less in a silicon wafer by FTIR, having an auxiliary film formation step for depositing an auxiliary film for measurement on a surface to be measured for the change in film thickness, an auxiliary film thickness measurement step for measuring the film thickness of the auxiliary film, a measurement step for measuring the film thickness of the auxiliary film after the change in film thickness, and a calculation step for calculating a change in film thickness of a back surface deposit from the result of the measurement step and the result of the auxiliary film thickness measurement step.

机译：一种用于通过FTIR测量硅晶片中的膜厚度的变化为0.3μm或更小的膜厚度测量方法，其具有用于在要测量的表面上沉积用于测量膜厚度变化的辅助膜的辅助膜形成步骤，用于测量辅助膜的膜厚度的辅助膜厚度测量步骤，用于在膜厚度变化之后测量辅助膜的膜厚度的测量步骤，以及用于计算背面的膜厚度的变化的计算步骤。从测量步骤的结果和辅助膜厚度测量步骤的结果中沉积。

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公开/公告号US8409349B2

专利类型
公开/公告日2013-04-02

原文格式PDF
申请/专利权人 KAZUHIRO OHKUBO;
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申请/专利号US20090480921
发明设计人 KAZUHIRO OHKUBO;
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申请日2009-06-09
分类号H01L21/322;C30B23/00;C30B25/00;C30B28/12;C30B28/14;C30B35/00;
国家 US
入库时间 2022-08-21 16:44:11

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