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SILICON STRUCTURE WITH OPENING HAVING HIGH ASPECT RATIO, METHOD FOR MANUFACTURING THE SILICON STRUCTURE, APPARATUS FOR MANUFACTURING THE SILICON STRUCTURE, PROGRAM FOR MANUFACTURING THE SILICON STRUCTURE, AND METHOD FOR MANUFACTURING ETCHING MASK FOR THE SILICON STRUCTURE
SILICON STRUCTURE WITH OPENING HAVING HIGH ASPECT RATIO, METHOD FOR MANUFACTURING THE SILICON STRUCTURE, APPARATUS FOR MANUFACTURING THE SILICON STRUCTURE, PROGRAM FOR MANUFACTURING THE SILICON STRUCTURE, AND METHOD FOR MANUFACTURING ETCHING MASK FOR THE SILICON STRUCTURE
Provided are a silicon structure having an opening which has a high aspect ratio and an etching mask for forming the silicon structure. A step of performing hole etching or trench etching of silicon so as to substantially expose a portion of at least a bottom surface of etched silicon and a step of forming a silicon oxide film by a CVD method on the silicon structure formed by the step of performing the hole etching or the trench etching are conducted. Thereafter, a step of exposing the formed silicon oxide film to a gas containing a hydrogen fluoride vapor is conducted. Further, the above-mentioned step of performing the hole etching or the trench etching is conducted again.
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