首页>
外国专利>
SILICON STRUCTURE WITH OPENING HAVING HIGH ASPECT RATIO, METHOD FOR MANUFACTURING THE SILICON STRUCTURE, APPARATUS FOR MANUFACTURING THE SILICON STRUCTURE, PROGRAM FOR MANUFACTURING THE SILICON STRUCTURE, AND METHOD FOR MANUFACTURING ETCHING MASK FOR THE SILICON STRUCTURE
SILICON STRUCTURE WITH OPENING HAVING HIGH ASPECT RATIO, METHOD FOR MANUFACTURING THE SILICON STRUCTURE, APPARATUS FOR MANUFACTURING THE SILICON STRUCTURE, PROGRAM FOR MANUFACTURING THE SILICON STRUCTURE, AND METHOD FOR MANUFACTURING ETCHING MASK FOR THE SILICON STRUCTURE
[PROBLEMS] To provide a silicon structure with an opening having a high aspect ratio and an etching mask for forming the silicon structure. [MEANS FOR SOLVING PROBLEMS] In the manufacture of a silicon structure, the following steps are carried out. Silicon is subjected to hole etching or trench etching so that silicon at least on the bottom of an etched part is substantially exposed (hole etching or trench etching step). A silicon oxide film is formed by CVD on a silicon structure formed by the above hole etching or trench etching (silicon oxide film formation step). Thereafter, the formed silicon oxide film is exposed to hydrogen fluoride vapor-containing gas (gas exposure step). Further, the hole etching or trench etching step is again carried out. ® KIPO & WIPO 2009
展开▼
