Dopant confinement in the delta doped layer using a dopant segregation barrier in quantum well structures

• 1. 使用保形掺杂物沉积的3D Si结构中的保形掺杂 [P] . 中国专利： CN107949918B . 2021.05.18
• 2. 使用保形掺杂物膜沉积在3D结构中的保形卤素掺杂 [P] . 中国专利： CN111095481A . 2020-05-01
• 3. Dopant confinement in the delta doped layer using a dopant segregation barrier in quantum well structures [P] . 美国专利： US7601980B2 . 2009-10-13

  机译： 使用量子阱结构中的掺杂物隔离势垒将掺杂物限制在δ掺杂层中

• 4. Dopant confinement in the delta doped layer using a dopant segregration barrier in quantum well structures [P] . 美国专利： US7790536B2 . 2010-09-07

  机译： 使用量子阱结构中的掺杂物隔离栅将掺杂物限制在δ掺杂层中

• 5. DOPANT CONFINEMENT IN THE DELTA DOPED LAYER USING A DOPANT SEGREGRATION BARRIER IN QUANTUM WELL STRUCTURES [P] . 美国专利： US2009298266A1 . 2009-12-03

  机译： 量子阱结构中的掺杂偏析阻挡层，在三角掺杂层中的掺杂限制

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• 1. Preparation, Characterization and Thermal Expansion of Pr Co-Dopant in Samarium Doped Ceria [J] . V. Venkatesh ,V. Prashanth Kumar ,R. Sayanna . 材料物理与化学进展（英文） . 2012,第4期
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