After the natural oxide film on the Si wafer is removed by a cleaning method using hydrofluoric acid (HF), a Ti thin film is deposited and a rapid heat treatment process is performed to form Ti salicide. After removal of the native oxide film, the growth of the oxide film on the Si wafer is restrained, and the Ti thin film is deposited so that the silicon wafer and the silicon layer are in direct contact with the Ti layer, thereby forming the Ti salicide having low surface resistance and high uniformity.
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