STUDY OF SERIES RESISTANCE AND EFFECTIVE CHANNEL LENGTH BEHAVIOR COMPARING GRADED-CHANNEL AND CONVENTIONAL SOI nMOSFETs

机译：梯度沟道和常规SOI nMOSFET的串联电阻和有效沟道长度行为的研究

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This work analyzes the extraction of series resistance and effective channel length in Graded-Channel and conventional SOI nMOSFETs devices using two-dimensional simulations. The results showed that series resistance in conventional SOI device is smaller than in Graded-Channel SOI, while the total resistance presents larger values. These results also show that the difference between the mask and effective channel length obtained in GC SOI is close to the low doped region length (L_(LD)).

机译：这项工作使用二维仿真分析了梯度沟道和传统SOI nMOSFET器件中的串联电阻和有效沟道长度的提取。结果表明，传统SOI器件的串联电阻要小于渐变沟道SOI，而总电阻则呈现较大的值。这些结果还表明，GC SOI中获得的掩模与有效沟道长度之间的差异接近于低掺杂区长度（L_（LD））。

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来源
《18th Symposium on Microelectronics Technology and Devices; 16th Symposium on Integrated Circuits and System Design; Sep 8-11, 2003; Sao Paulo, Brazil》|2003年|p.58-67|共10页
会议地点 Sao Paulo(BR);Sao Paulo(BR);Sao Paulo(BR);Sao Paulo(BR)
作者
Galba Fake de Almeida; Aparecido Sirley Nicolett; Joao Antonio Martino;
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作者单位

Laboratorio de Sistemas Integraveis -Universidade de Sao Paulo, Brazil;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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专利

1. Analysis of the substrate effect on enhancement-mode SOI nMOSFET effective channel length and series resistance extraction at 77 K [J] . M. A. Pavanello, A. S. Nicolett, J. A. Martino Journal de Physique, IV: Proceedings of International Conference . 1998,第3期

机译：衬底对增强型SOI nMOSFET有效沟道长度和77 K时串联电阻提取的影响分析
2. Analysis of source-follower buffers implemented with graded-channel SOI nMOSFETs operating at cryogenic temperatures [J] . Michelly de Souza, Denis Flandre, Marcelo Antonio Pavanello Cryogenics . 2009,第11期

机译：分析在低温下使用渐变沟道SOI nMOSFET实现的源极跟随器缓冲器
3. Analysis of source-follower buffers implemented with graded-channel SOI nMOSFETs operating at cryogenic temperatures [J] . Michelly de Souza, Denis Flandre, Marcelo Antonio Pavanello Cryogenics . 2009,第11期

机译：分析在低温下使用渐变沟道SOI nMOSFET实现的源极跟随器缓冲器
4. A STUDY OF TOTAL SERIES RESISTANCE AND EFFECTIVE CHANNEL LENGTH COMPARING SOI nMOSFET AND GC SOI nMOSFET IN SATURATION REGION [C] . Galba Falce de Almeida, Joao Antonio Martino Proceedings vol.2005-08; International Symposium on Microelectronics Technology and Devices(SBMICRO 2005); 200509; . 2005

机译：饱和区SOI nMOSFET和GC SOI nMOSFET的总串联电阻和有效沟道长度的比较
5. Implementation of a fully depleted Δ-channel SOI NMOSFET [D] . Jiao, Zhixian 2000

机译：完全耗尽的Δ沟道SOI NMOSFET的实现
6. Clinical effectiveness of the sequential 4-channel NMES compared with that of the conventional 2-channel NMES for the treatment of dysphagia in a prospective double-blind randomized controlled study [O] . Kyoung-Ho Seo, Joonyoung Jang, Eun Gyeong Jang, 2021

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7. Extraction of MOSFET threshold voltage, series resistance, effective channel length, and inversion layer mobility from small-signal channel conductance measurement [O] . Kong Frederick Chung Jeng, Yeow Y. T., Yao Z. Q. 2001

机译：从小信号沟道电导测量中提取MOSFET阈值电压，串联电阻，有效沟道长度和反型迁移率

STUDY OF SERIES RESISTANCE AND EFFECTIVE CHANNEL LENGTH BEHAVIOR COMPARING GRADED-CHANNEL AND CONVENTIONAL SOI nMOSFETs

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