A STUDY ON THE SELF-HEATING EFFECT IN DEEP-SUBMICROMETER PARTIALLY DEPLETED SOI MOSFETS AT LOW TEMPERATURES

机译：深亚微米部分耗尽SOI MOSFET低温自热效应的研究

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This work studies the self-heating effect in deep-submicrometer partially depleted SOI nMOSFETs during low temperature operation and high gate/drain voltages. The study is carried out by looking at the influence of the halo implantation on the thermal characteristics. The halo region causes a more pronounced negative output conductance than for the transistors without a halo implantation. An estimate of the temperature rise in both types of devices is made, based on the thermal resistance, which is derived from the output characteristics in function of the temperature.

机译：这项工作研究了在低温工作和高栅极/漏极电压期间深亚微米部分耗尽的SOI nMOSFET中的自热效应。通过观察晕环注入对热特性的影响来进行研究。与没有光晕注入的晶体管相比，光晕区域会导致更明显的负输出电导。根据热阻对两种类型的设备中的温度升高进行估算，该热阻是根据温度的输出特性得出的。

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来源
《18th Symposium on Microelectronics Technology and Devices; 16th Symposium on Integrated Circuits and System Design; Sep 8-11, 2003; Sao Paulo, Brazil》|2003年|p.112-119|共8页
会议地点 Sao Paulo(BR);Sao Paulo(BR);Sao Paulo(BR);Sao Paulo(BR)
作者
M. A. Pavanello; J. A. Martino; E. Simoen; A. Mercha; C. Claeys; K. De Meyer;
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作者单位

Laboratorio de Sistemas Integraveis Universidade de Sao Paulo Av. Prof. Luciano Gualberto, trav.3 n. 158 05508-900 -Sao Paulo, Brazil;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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专利

1. Partially Depleted SOI Versus Deep N-Well Protected Bulk-Si MOSFETs: A High-Temperature RF Study for Low-Voltage Low-Power Applications [J] . Emam M., Raskin J.-P. Microwave Theory and Techniques, IEEE Transactions on . 2013,第4期

机译：部分耗尽的SOI与受N阱保护的体硅MOSFET相比：针对低压低功率应用的高温RF研究
2. Low-Frequency Noise in Partially Depleted SOI MOSFETs Operating from Linear Region to Saturation Region at Various Temperatures [J] . Kun-Ming CHEN, Hsin-Hui Hu, Guo-Wei HUANG, Japanese Journal of Applied Physics. Part 2, Letters . 2004,第4BPt1期

机译：在各种温度下从线性区域到饱和区域工作的部分耗尽SOI MOSFET的低频噪声
3. Threshold voltage instability at low temperatures in partially depleted thin-film SOI MOSFETs [J] . Wang J., Kistler N. IEEE Electron Device Letters . 1991,第6期

机译：部分耗尽的薄膜SOI MOSFET在低温下的阈值电压不稳定性
4. EVALUATION OF THE CHANNEL ENGINEERING IMPACT ON THE ANALOG PERFORMANCE OF DEEP-SUBMICROMETER PARTIALLY DEPLETED SOI MOSFETS AT LOW TEMPERATURES [C] . M. A. Pavanello, J. A. Martino, E. Simoen, Proceedings vol.2004-03; International Symposium on Microelectronics Technology and Devices(SBMicro 2004); 2004; . 2004

机译：通道工程对深亚微米部分耗尽SOI MOSFET低温模拟性能影响的评估
5. Area efficient body contact for partially depleted silicon-on-insulator (SOI) MOSFETs. [D] . Daghighi, Arash. 2004

机译：适用于部分耗尽型绝缘体上硅（SOI）MOSFET的面积有效体接触。
6. Study of a hysteresis window of FinFET and fully-depleted silicon-on-insulator (FDSOI) MOSFET with ferroelectric capacitor [O] . Chankeun Yoon, Seungjun Moon, Changhwan Shin -1

机译：FinFET和带铁电电容器的全耗尽绝缘体上硅（FDSOI）MOSFET的磁滞窗口研究
7. On the RF Extrinsic Resistance Extraction for Partially-Depleted SOI MOSFETs [O] . Sheng-chun Wang, Pin Su, Kun-ming Chen, 2016

机译：关于部分耗尽sOI mOsFET的RF外部电阻提取

A STUDY ON THE SELF-HEATING EFFECT IN DEEP-SUBMICROMETER PARTIALLY DEPLETED SOI MOSFETS AT LOW TEMPERATURES

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