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首页> 外文会议>2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon >Study of high-temperature Smart Cut™: Application to thin films of single crystal silicon and silicon-on-sapphire films
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Study of high-temperature Smart Cut™: Application to thin films of single crystal silicon and silicon-on-sapphire films

机译：高温Smart Cut™的研究：在单晶硅薄膜和蓝宝石上硅薄膜上的应用

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This paper presents results introducing a novel method of fabrication of thin silicon films based on combination of film separation by Smart Cut™ technology and a high temperature liquid phase epitaxy. The separation kinetics of the substrate is characterized for silicon, implanted with a dose of 5.0×10 H×cm and an implantation energy of 60 keV, over a range of temperature from 450°C to 700°C. The out-diffusion of hydrogen is studied by Energy Recoil Detection Analysis and a model of diffusion of hydrogen in silicon, taking into account the implantation damages, is proposed. Based on this kinetics analysis, Smart Cut™ separation is proceeded at temperature superior to 1100°C, considering an implanted silicon wafer bonded with a sapphire wafer, through which, a laser beam anneals the structure. Finally, this article presents results of liquid silicon deposition onto an implanted silicon substrate. The last ones show the possibility to detach the grown film and the upper part of the implanted substrate by Smart Cut™ during the step of liquid phase epitaxy. Electron Backscattering Diffraction Pattern analysis is considered in order to demonstrate the occurrence of epitaxy of the deposited liquid onto the implanted substrate.
机译：本文介绍了基于Smart Cut™技术进行的薄膜分离与高温液相外延相结合的新型薄膜制造方法。在450°C至700°C的温度范围内，以5.0×10 H×cm的剂量注入和60 keV的注入能量对硅表征了衬底的分离动力学。通过能量反冲检测分析研究了氢的向外扩散，并提出了一种考虑到注入损伤的氢在硅中的扩散模型。基于这一动力学分析，考虑到与蓝宝石晶片键合的植入硅晶片，激光切割使结构退火，在高于1100°C的温度下进行Smart Cut™分离。最后，本文介绍了液态硅沉积到植入的硅基板上的结果。最后一个表明在液相外延步骤中，可以通过Smart Cut™分离生长的薄膜和所植入衬底的上部的可能性。考虑电子反向散射衍射图分析，以证明在沉积的衬底上沉积的液体发生了外延。

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