A new 1200 V-class edge termination structure with trench double field plates for high dV/dt performance

著录项

• 来源
  《2017 29th International Symposium on Power Semiconductor Devices and IC's》|2017年|109-112|共4页
• 会议地点 Sapporo(JP)
• 作者

  Wentao Yang; Hao Feng; Yong Liu; Xiangming Fang; Yuichi Onozawa; Hiroyuki Tanaka; Kaname Mitsuzuka; Johnny K. O. Sin;

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• 作者单位

  Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China;

  Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China;

  Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China;

  Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China;

  Fuji Electric Co., Ltd, 4-18-1 Tsukama, Matsumoto, Nagano 390-0821, Japan;

  Fuji Electric Co., Ltd, 4-18-1 Tsukama, Matsumoto, Nagano 390-0821, Japan;

  Fuji Electric Co., Ltd, 4-18-1 Tsukama, Matsumoto, Nagano 390-0821, Japan;

  Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China;

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• 会议组织
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  XML;

  机译：XML格式;