A new sub-micron trench cell concept in ultrathin wafer technology for next generation 1200 V IGBTs

机译：适用于下一代1200 V IGBT的超薄晶圆技术中的新亚微米沟槽单元概念

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The overall growing trend towards electrification and, at the same time, the urgent need to minimize energy consumption strongly requires higher energy efficiency in power electronics. We present a new technology concept for next generation 1200 V IGBTs with vastly reduced overall power losses using an optimized micro-pattern trench (MPT) cell design with sub-micron mesas. Further important parameters relevant for inverters driving electrical machines were optimized, including turn-off softness, dv/dt-controllability, and short circuit capability, providing a right-fit solution to customer requirements.

机译：电气化的总体增长趋势以及与此同时，迫切需要将能耗降至最低的强烈要求，在电力电子领域需要更高的能源效率。我们使用经过优化的具有亚微米台面的微图案沟槽（MPT）单元设计，为下一代1200 V IGBT提供了新的技术概念，可大幅降低总功耗。优化了与驱动电机的逆变器相关的其他重要参数，包括关断软度，dv / dt可控制性和短路能力，从而为满足客户要求提供了合适的解决方案。

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来源
《2017 29th International Symposium on Power Semiconductor Devices and IC's》|2017年|69-72|共4页
会议地点 Sapporo(JP)
作者
Christian Jaeger; Alexander Philippou; Antonio Ve Ilei; Johannes G. Laven; Andreas Härtl;
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作者单位

Infineon Technologies AG, Munich, Germany;

Infineon Technologies AG, Munich, Germany;

Infineon Technologies Austria AG, Villach, Austria;

Infineon Technologies AG, Munich, Germany;

Infineon Technologies AG, Munich, Germany;

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原文格式 PDF
正文语种 eng
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insulated gate bipolar transistors; isolation technology; power semiconductor devices;

机译：绝缘栅双极晶体管隔离技术功率半导体器件;

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专利

1. Local lifetime control IGBT structures f turn-off performances comparison for hard- and soft-switching between 1200V trench and new planar PT-IGBTs [J] . S. Azzopardi, A. Kawamura, H. Iwamoto Microelectronics & Reliability . 2001,第9a10期

机译：本地寿命控制IGBT结构在1200V沟槽与新型平面PT-IGBT之间进行硬和软切换时的关断性能比较
2. 600V-IGBT3: trench field stop technology in 70 Μm ultra thin wafer technology [J] . Ruthing H., Umbach F., Hellmund O., IEE proceedings. Part G, Circuits, devices and systems . 2004,第3期

机译：600V-IGBT3：70微米超薄晶圆技术中的沟槽场截止技术
3. New generation 1200 V power module with trench gate IGBT and super soft recovery diode and its evaluations [J] . Lwamoto H., Kawakami A. IEE Proceedings. Part B . 2000,第3期

机译：带有沟槽栅IGBT和超软恢复二极管的新一代1200 V电源模块及其评估
4. A new sub-micron trench cell concept in ultrathin wafer technology for next generation 1200 V IGBTs [C] . Christian Jaeger, Alexander Philippou, Antonio Ve Ilei, International Symposium on Power Semiconductor Devices and IC s . 2017

机译：用于下一代1200 V IGBT的超薄晶片技术中的新亚微米沟槽概念
5. Development of an Industrial Fabrication Process for Next Generation, Thinner and Larger Crystalline Silicon (c-Si) Wafer-Based Solar Cells. [D] . Nguyen, Anh V. 2012

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A new sub-micron trench cell concept in ultrathin wafer technology for next generation 1200 V IGBTs

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