Study of the phase transitions of Nickel Platinum Silicide obtained by sputtering and rapid thermal processing

机译：溅射和快速热处理获得的镍硅化镍铂的相变研究

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Nickel-Platinum Silicide (NiPtSi) layers were formed using a Rapid Thermal Process (RTP) furnace. The metal thin films were deposited by RF Magnetron Sputtering using a Ni(Pt) target (97% Ni and 3% Pt) onto a Si (100) substrate. The silicidation of the samples were performed at temperature ranged from 450°C to 900°C. Energy Dispersion Scanning (EDS) and Grazing Incidence X-Ray Diffraction (GIXRD) were used to confirm the composition and phase of the NiPtSi for each rapid thermal process (RTP) temperature. The Scanning Electron Microscopy was also used to evaluate the surface and difference for each temperature. The lower resistivity monosilicide phase is predominant at temperatures lower than 850°C.

机译：使用快速热处理（RTP）炉形成了镍铂硅化物（NiPtSi）层。通过使用Ni（Pt）靶材（97％Ni和3％Pt）进行RF磁控溅射将金属薄膜沉积到Si（100）衬底上。样品的硅化在450℃至900℃的温度范围内进行。使用能量分散扫描（EDS）和掠入射X射线衍射（GIXRD）来确定每个快速热处理（RTP）温度下NiPtSi的成分和相。扫描电子显微镜还用于评估每个温度的表面和差异。在低于850°C的温度下，较低电阻率的单硅化物相占主导地位。

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来源
《2017 32nd Symposium on Microelectronics Technology and Devices》|2017年|1-4|共4页
会议地点 Fortaleza(BR)
作者
F. H. Cioldin; J. A. Diniz; A. R. Vaz; G. A. Calligaris; L. P. Cardoso; I. Doi;
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作者单位

Center of Semiconductor Components and Nanotechnology, University of Campinas - Campinas, Brazil;

School of Electrical and Computer Engineering, University of Campinas - Campinas, Brazil;

Center of Semiconductor Components and Nanotechnology, University of Campinas - Campinas, Brazil;

Gleb Wataghin' Institute of Physics, University of Campinas- Campinas, Brazil;

Gleb Wataghin' Institute of Physics, University of Campinas- Campinas, Brazil;

School of Electrical and Computer Engineering, University of Campinas - Campinas, Brazil;

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原文格式 PDF
正文语种 eng
中图分类
关键词
Silicides; Nickel alloys; Silicon; Resistance; Conductivity; Temperature measurement;

机译：硅化物;镍合金;硅;电阻;电导率;温度测量;;

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1. FORMATION OF PLATINUM SILICIDE LAYERS DURING THE RAPID THERMAL PROCESSING OF THE PLATINUM–SILICON SYSTEM: STRUCTURAL-PHASE CHANGES [J] . Vitaly A. Solodukha, Vladimir A. Pilipenko, Valentina A. Gorushko, High Temperature Material Processes . 2019,第3期

机译：在铂 - 硅系统的快速热处理期间形成铂硅化物层：结构相变
2. High SnS phase purity films produced by rapid thermal processing of RF-magnetron sputtered SnS_(2-x) precursors [J] . Sousa M. G., da Cunha A. F. Applied Surface Science . 2019,第APRa1期

机译：通过RF磁控溅射SnS_（2-x）前体的快速热处理生产的高SnS相纯度薄膜
3. A Study on the Formation of 2-Dimensional Tungsten Disulfide Thin Films on Sapphire Substrate by Sputtering and High Temperature Rapid Thermal Processing [J] . Nam Hanyeob, Kim Hong-Seok, Han Jae-Hee, Journal of nanoscience and nanotechnology . 2018,第9期

机译：通过溅射和高温快速热加工对蓝宝石衬底形成二维钨二硫化薄膜的研究
4. Study of the phase transitions of Nickel Platinum Silicide obtained by sputtering and rapid thermal processing [C] . F. H. Cioldin, J. A. Diniz, A. R. Vaz, Symposium on Microelectronics Technology and Devices . 2017

机译：通过溅射和快速热处理获得镍铂硅化镍的相变的研究
5. Nano-silicide formation through point contact reaction, nickel-silicon/silicon/nickel-silicon and platinum-silicon/silicon/platinum-silicon nanowire heterostructures for nanodevices. [D] . Lu, Kuo-Chang. 2008

机译：通过点接触反应，纳米硅器件的镍硅/硅/硅镍和铂硅/硅/铂硅纳米线异质结构形成纳米硅化物。
6. Phase Formation and High-Temperature Stability of Very Thin Co-Sputtered Ti-Al and Multilayered Ti/Al Films on Thermally Oxidized Si Substrates [O] . Marietta Seifert, Eric Lattner, Siegfried B. Menzel, 2020

机译：热氧化硅衬底上非常薄的共溅射Ti-Al和多层Ti / Al膜的相形成和高温稳定性
7. An ab initio study of the nickel-catalyzed transformation of amorphous carbon into graphene in rapid thermal processing [O] . Shuang Chen, Wei Xiong, Yun Shen Zhou, 2016

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8. Influence of Rapid Thermal Ramp Rate on Phase Transformation of Titanium Silicides [R] . Bailey, G. , Hu, Y. Z. , Smith, P. M. , 1999

机译：快速热冲击速率对钛硅化物相变的影响

Study of the phase transitions of Nickel Platinum Silicide obtained by sputtering and rapid thermal processing

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