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首页> 外文会议>2nd Italian Conference on Sensors and Microsystems Artificial and Natural Perception Rome, Italy 3-5 February 1997 >Photo Sensitivity Activation of SnO_2 Thin Film Gas Sensors at Room Temperature
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Photo Sensitivity Activation of SnO_2 Thin Film Gas Sensors at Room Temperature

机译：SnO_2薄膜气体传感器在室温下的光敏活化

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摘要

The action of light is known to influence adsorption/desorption processes of molecular species on a semiconductor, by changing carrier concentration at the surface. These effects might provide a way of increasing the yield and selectivity in semiconducting gas sensors working at room temperature. We have studied the photo-response of thin films of n-type SnO_2, varying the gaseous atmospheres in the test chamber at different temperatures, showing that the response of the oxide film to these variations can be effectively enhanced by light. In addition we have found evidence of photodesorption of oxygen previously chemisorbed at the surface of the films. Our results indicate also that for long exposure times, other overwhelming processes can take place, they have a partial explanation in the balance between photodesorption and chemisorption of oxygen caused by irradiation. Specifically the inversion layer field pulls the photogenerated holes towards the surface, where they neutralise the chemisorbed oxygen species and so simultaneously reduce the surface field. In steady-state illumination photo-assisted desorption is balanced by new chemisorption processes.
机译：已知光的作用通过改变表面上的载流子浓度来影响分子种类在半导体上的吸附/解吸过程。这些效果可能为提高在室温下工作的半导体气体传感器的产率和选择性提供了一种方法。我们研究了n型SnO_2薄膜的光响应，在不同温度下改变了测试室中的气态气氛，表明通过光可以有效地增强氧化膜对这些变化的响应。此外，我们发现了先前化学吸附在薄膜表面的氧气的光解吸证据。我们的结果还表明，对于较长的曝光时间，可能还会发生其他不堪重负的过程，它们部分解释了光解吸和辐照引起的氧气化学吸附之间的平衡。具体地说，反型层场将光生空穴拉向表面，在那里中和化学吸附的氧，从而同时减小了表面场。在稳态照明下，新的化学吸附过程可以平衡光辅助解吸。

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