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首页> 外文会议>42nd international symposium on microelectronics (IMAPS 2009) >Laser Based Assembly of Ultra Fine Pitch Bumped ICs For Chip-on-Chip Proximity Coupled Applications
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Laser Based Assembly of Ultra Fine Pitch Bumped ICs For Chip-on-Chip Proximity Coupled Applications

机译：基于激光的超细间距凹凸集成电路的组装，用于芯片间接近耦合应用

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This paper describes a process flow for creating ultra-fine-pitch solder interconnects between stacked die. Thernapplication for this die stack is Proximity Communication (PxC). Tight geometric control of both the bumping andrnassembly processes are required in all three dimensions, x-y-z, to enable efficient capacitance communicationrnbetween the die. The test vehicle for this program consists of a bridged-stack design, where one chip is used asrncommunication link (bridge) between two other die (island). The solder bumps perform several critical functions inrnthis application: 1) provide for electrical transmission of power, ground, and low frequency signals between chips,rn2) create precise x-y alignment between the stacked die which allows for good overlap of the non-bumped padsrnwhich are used for proximity coupled data transmission between die, and 3) provide for a narrow and tightlyrncontrolled standoff distance between stacked die to enable efficient capacitive coupling. The bumping processrnconsisted of depositing an e-Ni/Au layer as the UBM (3 μm) on both the bridge and island dies, creating micrornbumps of Sn (3 μm) on the bridge die, and creating a second set of flip chip sized bumps (100 μm SnAgCu) on thernisland die for assembly to a ceramic substrate. The bumped wafers were thinned to 150 μm, singulated, laserrnassembled together using the micro bumps to create a three chip unit, and then laser assembled to a ceramicrnsubstrate using the flip chip bumps. Assembly is accomplished by aligning the bumped bridge die to therncorresponding unbumped island die and laser heating the micro bump area to reflow the Sn solder to form the finernpitch interconnect. The second assembly to the ceramic substrate is also accomplished using the laser heatingrnprocess. This laser technology allows for highly localized heating, which allows for independent reflow andrnassembly of the two different solder bump regions, i.e. Sn micro-bumps and SnAgCu flip chip bumps.
机译：本文介绍了在堆叠管芯之间创建超细间距焊料互连的工艺流程。该管芯堆叠的应用是邻近通信（PxC）。在所有三个维度（x-y-z）中都需要对碰撞和组装过程进行严格的几何控制，以实现管芯之间的有效电容通信。此程序的测试工具包括桥接堆叠设计，其中一个芯片用于两个其他裸片（岛）之间的通信链路（桥接）。焊料凸点在此应用中执行几个关键功能：1）在芯片之间提供电源，地和低频信号的电传输，rn2）在堆叠的裸片之间建立精确的xy对齐，从而使非凸点焊盘良好重叠用于在裸片之间进行邻近耦合的数据传输，并且3）提供了堆叠裸片之间的狭窄且严格控制的间距，以实现有效的电容耦合。凸块工艺包括在桥模和岛模上都沉积e-Ni / Au层作为UBM（3μm），在桥模上产生微小的Sn（3μm）凸块，并形成第二组倒装芯片尺寸的凸块（100μmSnAgCu）在thenis模具上，用于组装到陶瓷基板上。将凸块的晶片减薄至150μm，将其切细，使用微凸块将其激光组装在一起，以创建三芯片单元，然后使用倒装芯片凸块将其激光组装到陶瓷基板上。通过将凸出的桥芯片对准相应的未凸出的岛式芯片，并激光加热微凸块区域以回流锡焊料以形成细间距互连，来完成组装。陶瓷基板的第二组装也使用激光加热工艺完成。这种激光技术可以实现高度局部的加热，从而可以独立回流和组装两个不同的焊料凸点区域，即Sn微凸点和SnAgCu倒装芯片凸点。

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