Gallium nitride - delivering its promise in automotive applications

机译：氮化镓-实现其在汽车应用中的承诺

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After years of development and market promise, gallium nitride (GaN) power transistors have been commercially available for several years now and are being designed into numerous applications by a wide range of customers worldwide. These devices, in 100 volt and 650 volt ranges and with currents from 10 amps to 120 amps, have seen early adoption in consumer and computer applications. We are now seeing a range of automotive applications coming to fruition, in particular on-board chargers; DC-DC converters for high voltage and 48 V subsystems; and inverters for startstop systems and mild hybrid traction inverters. This paper will describe evolving GaN technology, several current transportation applications, and address the necessary qualification and reliability requirements.

机译：经过多年的发展和市场前景，氮化镓（GaN）功率晶体管已经商业化使用了几年，并被全球范围内的众多客户设计用于众多应用。这些器件的工作电压范围为100伏特和650伏特，电流范围为10安培至120安培，已在消费者和计算机应用中得到了较早的采用。现在，我们看到一系列汽车应用正在实现，特别是车载充电器。用于高压和48 V子系统的DC-DC转换器；以及用于启停系统的逆变器和轻度混合动力牵引逆变器。本文将描述不断发展的GaN技术，几种当前的运输应用，并解决必要的鉴定和可靠性要求。

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来源
《6th Hybrid and Electric Vehicles Conference》|2016年|1-6|共6页
会议地点 London(GB)
作者
Girvan Patterson; John Roberts;
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作者单位

GaN Systems Inc, Canada;

GaN Systems Inc, Canada;

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原文格式 PDF
正文语种 eng
中图分类
关键词
traction; automotive electrics; DC-DC power convertors; gallium compounds; invertors; power transistors;

机译：牵引;汽车电子; DC-DC功率逆变器;镓化合物;逆变器;功率晶体管;

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专利

1. Gallium nitride: the promise of high RF power and low microwave noise performance in S and I band [J] . C.H. Oxley Solid-State Electronics . 2004,第7期

机译：氮化镓：有望在S和I波段实现高射频功率和低微波噪声性能
2. Synthesis and Application of Metal Nitrides as Schottky Electrodes for Gallium Nitride Electron Devices [J] . Ao Jin-Ping, Shiraishi Takauki, Li Liuan, Science of advanced materials . 2014,第7期

机译：氮化镓电子器件肖特基电极金属氮化物的合成与应用
3. A variable gain reconfigurable mixer using gallium nitride high-electron-mobility transistor for wireless local area network applications [J] . Vishnoi Manoj Kumar, Srikant Satya Sai, Mahapatra Rajendra Prasad, International journal of communication systems . 2021,第17期

机译：用于无线局域网应用的氮化镓高电子迁移晶体管可变增益可重新配置混合器
4. Gallium Nitride - delivering its promise in Automotive Applications [C] . Girvan Patterson, John Roberts IET Hybrid and Electric Vehicles Conference . 2017

机译：氮化镓 - 在汽车应用中提供其承诺
5. Trapping Effects in Aluminum Gallium Nitride/Gallium Nitride HEMTs for High Frequency Applications : Modeling and Characterization Using Large Signal Network Analyzer and Deep Level Optical Spectroscopy. [D] . Yang, Chieh Kai. 2011

机译：用于高频应用的氮化铝镓/氮化镓HEMT中的陷获效应：使用大信号网络分析仪和深层光谱学进行建模和表征。
6. Gallium Nitride (GaN) High-Electron-Mobility Transistors with Thick Copper Metallization Featuring a Power Density of 8.2 W/mm for Ka-Band Applications [O] . Y. C. Lin, S. H. Chen, P. H. Lee, 2020

机译：具有厚铜金属化特性的氮化镓（GaN）高电子迁移率晶体管用于Ka波段应用的功率密度为8.2 W / mm
7. Gallium-Nitride-Based Power Electronic Converter Design, Prototyping and Testing for Automotive Power Management and Renewable Energy Applications [O] . Dargahi Shayan 2012

机译：基于氮化镓的功率电子转换器的设计，原型设计和测试，用于汽车电源管理和可再生能源应用
8. Deposition of Device Quality Epitaxial Layers of Gallium Nitride and Indium Nitride for Electronic Applications [R] . Francis, D. B. 1987

机译：电子应用中氮化镓和氮化铟器件质量外延层的沉积

Gallium nitride - delivering its promise in automotive applications

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