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首页> 外文会议>Advanced Characterization Techniques for Optics, Semiconductors, and Nanotechnologies III; Proceedings of SPIE-The International Society for Optical Engineering; vol.6672 >Interferometry for wafer dimensional metrology
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Interferometry for wafer dimensional metrology

机译：晶圆尺寸计量的干涉测量

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摘要

Wafer shape and thickness variation are important parameters in the IC manufacturing process. The thickness variation, also called flatness, enters the depth-of-focus budget of microlithography, and also affects film thickness uniformity in the CMP processing. The shape mainly affects wafer handling, and may also require some depth-of-focus if the wafer shape is not perfectly flattened by chucking. In the progression of technology nodes to smaller feature sizes, and hence smaller depth-of-focus of the lithography tool, the requirement for the PV-flatness over stepper exposure sites is becoming progressively tighter, and has reached 45nm for the next technology node of 45nm half pitch. Consequently, in order to be gauge-capable the flatness metrology tool needs to provide a measurement precision of the order of 1nm. Future technology nodes will require wafers with even better flatness and metrology tools with better measurement precision. For the last several years the common capacitive tools for wafer dimensional metrology have been replaced by interferometric tools with higher sensitivity and resolution. In the interferometric tools the front and back surface figure of the wafer is measured simultaneously while the wafer is held vertically in its intrinsic shape. The thickness variation and shape are then calculated from these single-sided maps. The wafer shape, and hence each wafer surface figure, can be tens of microns, necessitating a huge dynamic range of the interferometer when considering the lnm measurement precision. Furthermore, wafers are very flexible, and hence very prone to vibrations as well as bending. This presentation addresses these special requirements of interferometric wafer measurements, and discusses the system configuration and measurement performance of WaferSight~TM, KLA-Tencor's interferometric dimensional metrology tool for 300mm wafers for current and future technology nodes.
机译：晶圆形状和厚度变化是IC制造过程中的重要参数。厚度变化（也称为平坦度）会进入微光刻的聚焦深度预算，并且还会影响CMP处理中的膜厚度均匀性。该形状主要影响晶片的处理，如果晶片的形状不能通过卡盘完美地弄平，则该形状也可能需要一定的焦深。随着技术节点向更小的特征尺寸发展，从而使光刻工具的聚焦深度更小，对步进曝光站点上的PV平坦度的要求也越来越严格，对于下一个技术节点，其达到45nm 45nm半间距。因此，为了具有测量能力，平坦度计量工具需要提供1nm量级的测量精度。未来的技术节点将需要具有更好平面度的晶圆和具有更高测量精度的计量工具。在过去的几年中，用于晶圆尺寸计量的通用电容式工具已被具有更高灵敏度和分辨率的干涉仪工具所取代。在干涉仪中，同时垂直测量晶片的固有形状，同时测量晶片的正面和背面图形。然后从这些单面贴图计算厚度变化和形状。晶片的形状以及每个晶片的表面图形可能为数十微米，因此在考虑1nm测量精度时，必须有很大的干涉仪动态范围。此外，晶片非常柔软，因此非常容易振动和弯曲。本演讲满足了干涉式晶圆测量的这些特殊要求，并讨论了WaferSight〜TM的系统配置和测量性能，WLA是适用于当前和未来技术节点的300mm晶圆的KLA-Tencor干涉尺寸度量工具。

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