Gate Leakage Current of AlGaN/GaN HEMTs Device Influenced by Substrate Defects

机译：衬底缺陷对AlGaN / GaN HEMTs器件栅漏电流的影响

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The gate leakage currents on the AlGaN/GaN HEMTs on 2-inch SiC epitaxial substrate are measured at Vgs=20 V. The defect image of the wafer observed by the optical surface analyzer and the photograph of fabricated devices on the wafer are superimposed. Comparing the gate leakage current map on the wafer, the relation between the gate leakage current and the location of the defect is found clearly.

机译：在Vgs = 20 V的条件下测量2英寸SiC外延衬底上的AlGaN / GaN HEMT上的栅极泄漏电流。将通过光学表面分析仪观察到的晶片缺陷图像与晶片上制造的器件照片叠加在一起。比较晶片上的栅极泄漏电流图，可以清楚地发现栅极泄漏电流与缺陷位置之间的关系。

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来源
《Annual International Conference on Compound Semiconductor MANufacturing TECHnology(CS MANTECH); 20050411-14; New Orleans,LA(US)》|2005年|P.71-73|共3页
会议地点 New OrleansLA(US)
作者
K. Matsushita; H. Sakurai; K. Takagi; H. Kawasaki; Y. Takada; T.Sasaki; K. Tsuda;
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作者单位

Microwave Solid-state Department Komukai Operation Toshiba Corp.1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki, 212-8581, Japan;

Advanced Electron Devices Laboratory, Research and Development Center, Toshiba Corp. 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki,;

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会议组织
原文格式 PDF
正文语种 eng
中图分类半导体技术;
关键词
GaN; AlGaN; HEMT; defect; gate leakage current;

机译：GaN; AlGaN; HEMT;缺陷;栅漏电流;

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专利

1. Influence of Surface Defect Charge at AlGaN-GaN-HEMT Upon Schottky Gate Leakage Current and Breakdown Voltage [J] . Wataru Saito, Masahiko Kuraguchi, Yoshiharu Takada, IEEE Transactions on Electron Devices . 2005,第2期

机译：AlGaN-GaN-HEMT表面缺陷电荷对肖特基栅漏电流和击穿电压的影响
2. In-situ passivation combined with GaN buffer optimization for extremely low current dispersion and low gate leakage in Si_3N_4/AlGaN/GaN HEMT devices on Si (111) [J] . M. Germain, K. Cheng, J. Derluyn, Physica status solidi . 2008,第6期

机译：原位钝化与GaN缓冲优化相结合，可在Si（111）上的Si_3N_4 / AlGaN / GaN HEMT器件中实现极低的电流分散和极低的栅极泄漏
3. TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices [J] . Mukherjee K., Darracq F., Curutchet A., Microelectronics & Reliability . 2017,第sepa期

机译：TCAD仿真功能可用于高级AlGaN / GaN HEMT器件的栅极泄漏电流分析
4. Gate Leakage Current of AlGaN/GaN HEMTs Device Influenced by Substrate Defects [C] . K. Matsushita, H. Sakurai, K. Takagi, Annual International Conference on Compound Semiconductor MANufacturing TECHnology . 2005

机译：基底缺损影响AlGaN / GaN Hemts装置的栅极漏电流
5. Investigation of normally-off mode AlGaN/GaN MOS HEMT device utilizing gate recession and p-GaN gate structure with ald grown high k gate insulators for high power application. [D] . Ma, Jin Seock. 2016

机译：研究常关模式的AlGaN / GaN MOS HEMT器件，该器件利用栅极后退和p-GaN栅极结构以及带有醛生长的高k栅极绝缘体来实现高功率应用。
6. High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate [O] . Yu-Chun Huang, Hsien-Chin Chiu, Hsuan-Ling Kao, 2021

机译：在6英寸N掺杂的低电阻率SiC基板上的常压P-GaN栅极AlGaN / GaN Hemts的高热耗散
7. Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by pulsed I-V and low frequency noise measurements [O] . Karboyan Serge, Tartarin Jean-Guy, Rzin M, 2013

机译：栅极漏电流对alGaN / GaN HEmT的影响由低频噪声和脉冲电测量证明，栅极漏电流对alGaN / GaN HEmT的影响由脉冲I-V和低频噪声测量证明
8. Self-Aligned ALD AlOx T-gate Insulator for Gate Leakage Current Suppression in SiNx-Passivated AlGaN/GaN HEMTs [R] . 2010

机译：自对准aLD alOx T栅极绝缘体，用于siNx钝化alGaN / GaN HEmT中的栅极漏电流抑制

Gate Leakage Current of AlGaN/GaN HEMTs Device Influenced by Substrate Defects

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