【24h】

FIXED ABRASIVE DIAMOND WIRE SAW SLICING OF SINGLE CRYSTAL SIC WAFERS

机译:单晶硅晶片的固定式磨料金刚石线锯切片

获取原文
获取原文并翻译 | 示例

摘要

This paper investigates the slicing of single crystal SiC with a fixed abrasive diamond wire. A spool-to-spool rocking motion diamond wire saw machine using a 0.22 mm nominal diameter diamond wire with electroplated bond and 20 μm average size diamond grit is used. The effect of wire downfeed speed on wafer surface roughness and subsurface damage is first investigated. The surface marks due to the loose diamond and stagnation of the wire during the change in wire cutting direction are studied. A scanning acoustic microscope is explored as a non-destructive evaluation method to identify the level of subsurface damage. Another set of tests investigates the effects of using a new diamond wire on the cutting forces and surface roughness. Scanning electron microscopy (SEM) is applied to examine the machined surfaces and the diamond wire wear. This study demonstrated the feasibility of fixed abrasive diamond wire cutting of SiC wafers and the usage of a scanning acoustic microscope to study the machining subsurface damage.
机译:本文研究了用固定磨料金刚石线切割单晶SiC的方法。使用线轴到线轴摇摆运动金刚石线锯机,该线锯机使用0.22 mm公称直径的金刚石线和电镀结合剂以及20μm平均尺寸的金刚石砂砾。首先研究了焊丝下送速度对晶片表面粗糙度和表面下损伤的影响。研究了在线切割方向变化期间由于线的松动菱形和停滞而引起的表面标记。扫描声显微镜作为一种非破坏性的评估方法,被用来确定地下破坏的程度。另一组测试研究了使用新的金刚石线对切削力和表面粗糙度的影响。应用扫描电子显微镜(SEM)来检查机加工表面和金刚石线的磨损。这项研究证明了用固定式金刚石砂线切割SiC晶片的可行性以及使用扫描声显微镜研究加工表面下损伤的可行性。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号