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首页> 外文会议>CMP-MIC Catalog no.05 IMIC - 1000P; International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference(CMP-MIC); 20050223-25; Fremont,CA(US) >INSTANTANEOUS, HIGH RESOLUTION, IN-SITU IMAGING OF SLURRY FILM THICKNESS DURING CMP
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INSTANTANEOUS, HIGH RESOLUTION, IN-SITU IMAGING OF SLURRY FILM THICKNESS DURING CMP

机译：CMP过程中瞬时高分辨原位成像

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摘要

Dual Emission Laser Induced Fluorescence (DELIF) is used to attain measurements of slurry film thickness during Chemical Mechanical Polishing (CMP). A Nd/Yag UV laser is used in tandem with two 12 bit CCD cameras with a zoom lens to obtain an instantaneous, high spatial and temporal resolution images in-situ. We are able to image individual pad asperities bending under the wafer during polishing. Once the intensities in the images are correlated to slurry layer thickness values, slurry layer roughness is observed. DELIF shows the slurry layer roughness beneath a flat wafer is 4.5 ± 0.5 um. This value compares well to profilometer measurements of pad surface roughness, 4.3 ± 0.3 um. Slurry layer roughness under 27 um deep etched wells in the wafer features is greater than the roughness outside the wells suggesting asperity expansion under features. Slurry layer roughness under air pockets that have accumulated under the wells in the wafer is less than the slurry filled regions under the wafer suggesting incomplete immersion of asperities under the air pockets.
机译：双发射激光诱导荧光（DELIF）用于在化学机械抛光（CMP）期间获得浆料膜厚度的测量值。 Nd / Yag UV激光器与两个带变焦镜头的12位CCD相机配合使用，以获取即时的，高空间和时间分辨率的原位图像。我们能够对抛光过程中晶片下方弯曲的各个焊盘凹凸进行成像。一旦图像中的强度与浆层厚度值相关，就可以观察到浆层粗糙度。 DELIF显示平坦晶片下方的浆料层粗糙度为4.5±0.5 um。该值与轮廓仪测量的焊盘表面粗糙度4.3±0.3 um相当。晶圆特征中27 um深蚀刻孔下的浆料层粗糙度大于孔外的粗糙度，表明特征下的粗糙扩展。积聚在晶片中的孔下方的气穴下的浆层粗糙度小于晶片下方的浆液填充区域，这表明凹凸不完全浸没在气穴下。

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