首页> 外文会议>Conference on Challenges in Process Integration and Device Technology 18-19 September 2000 Santa Clara, USA >Investigation on the Impacts of Misalignment in the Integration of 0.18u multilevel Interconnect
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Investigation on the Impacts of Misalignment in the Integration of 0.18u multilevel Interconnect

机译:错位对0.18u多级互连集成的影响的研究

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摘要

As technology continues to shrink with tighter design rules, it becomes inevitable for the integrated process tod emand a more stringent control over the in-line parameter. For multilevel interconnect, each processing step inthe formation of every layer of via plug and metal interconnect impacts the overall performance and yield of the silicon wafer. The control of the process thus becomes even mor echallenging as mor elayers of interconnect are required to meet the speed performance and density requirements.
机译:随着技术随着越来越严格的设计规则而不断缩小,集成过程不可避免地要求对在线参数进行更严格的控制。对于多层互连,形成通孔插塞和金属互连的每一层的每个处理步骤都会影响硅晶片的整体性能和良率。由于需要更多的互连层以满足速度性能和密度要求,因此对过程的控制变得更加困难。

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