首页> 外文会议>Conference on challenges in process integration and device technology >Investigation on the Impacts of Misalignment in the Integration of 0.18u multilevel Interconnect
【24h】

Investigation on the Impacts of Misalignment in the Integration of 0.18u multilevel Interconnect

机译:未对准对0.18U多级互连集成中的错位影响

获取原文

摘要

As technology continues to shrink with tighter design rules, it becomes inevitable for the integrated process tod emand a more stringent control over the in-line parameter. For multilevel interconnect, each processing step inthe formation of every layer of via plug and metal interconnect impacts the overall performance and yield of the silicon wafer. The control of the process thus becomes even mor echallenging as mor elayers of interconnect are required to meet the speed performance and density requirements.
机译:随着技术继续与更严格的设计规则缩小,对于集成过程TOD,它变得不可避免地是对在线参数的更严格控制。对于多级互连,每个处理步骤的每个通过插头和金属互连的形成每个层都会影响硅晶片的整体性能和产量。因此,对该过程的控制变得甚至是MoreChallenging,因为Mor Elayers的互连需要满足速度性能和密度要求。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号