Effects of Advanced Illumination Schemes on Design Manufacturability and Interactions with Optical Proximity Corrections

机译：高级照明方案对设计可制造性和光学邻近校正的相互作用的影响

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As advanced source illumination options become available for production implementation, at the 150 nm and 130 nm technology nodes, non-linear effects are introduced in the design shrink-path. In previous technologies, in particular 250 and 180 nm, partial coherence settings are used as a method to control mono-dimensional CD variations among features with different pitches (iso-dense bias). Source optimization becomes a function of the design pattern to be imaged and of the Optical Proximity Corrections (OPC) applied to this design.

机译：随着先进的光源照明选项可用于生产实施，在150 nm和130 nm技术节点上，设计收缩路径中引入了非线性效应。在先前的技术中，特别是在250和180 nm中，部分相干性设置被用作控制具有不同间距（等密度偏置）的特征之间的一维CD变化的方法。源优化成为要成像的设计图案和应用于此设计的光学邻近校正（OPC）的函数。

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来源
《Conference on Challenges in Process Integration and Device Technology 18-19 September 2000 Santa Clara, USA》|2000年|p.58-67|共10页
会议地点 Santa Clara CA(US)
作者
Luigi Capodieci; Juan Andres Torres; Robert Socha; Uwe Hollerbach; J.Fung Chen; Christian van Os; Yuri Granik; Olivier Toublan; Nickolas Cobb;
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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
Manufacturability Verification; Lithography; Semiconductor Processing; OPC; DFM; Physical Verification; Optical Extensions; Process Window;

机译：可制造性验证；平版印刷；半导体加工； OPC; DFM；实物验证；光学扩展；处理窗口;

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专利

1. Restricted Optical Proximity Effect Correction Pattern Generation Based on Optical Proximity Effect Correction-Design for Manufacturability Rule in Model-Based Optical Proximity Effect Correction [J] . Katsuhiko Harazaki, Tasuku Yoshioka, Kiyoshige Ohmori, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2007,第9BPt1期

机译：基于光学邻近效应校正的受限光学邻近效应校正模式生成-基于模型的光学邻近效应校正中的可制造性规则设计
2. Double-patterning interactions with wafer processing, optical proximity correction, and physical design flows [J] . Kevin Lucas Christopher Cork Alexander Miloslavsky Gerard Luk-Pat Levi Barnes John Hapli John Lewellen Greg Rollins Vincent Wiaux and Staf Verhaegen Journal of Micro/Nanolithography,MEMS and MOEMS . 2009,第3期

机译：与晶圆处理，光学邻近校正和物理设计流程的双重图案交互
3. Improvement of optical proximity-effect correction model accuracy by hybrid optical proximity-effect correction modeling and shrink correction technique for 10-nm node process [J] . Keiichiro Hitomi, Scott Halle, Marshal Miller, Journal of microanolithography, MEMS, and MOEMS . 2016,第3期

机译：通过10nm节点工艺的混合光学邻近效应校正建模和收缩校正技术提高光学邻近效应校正模型的准确性
4. Effects of Advanced Illumination Schemes on Design Manufacturability and Interactions with Optical Proximity Corrections [C] . Luigi Capodieci, Juan Andres Torres, Robert Socha, Conference on challenges in process integration and device technology . 2000

机译：高级照明方案对光学邻近校正设计可制造性和交互的影响
5. Fast and accurate lithography simulation and optical proximity correction for nanometer design for manufacturing [D] . Yu, Peng 2009

机译：快速准确的光刻模拟和光学接近度校正，可用于制造的纳米设计
6. A new design of light illumination scheme for deep tissue photoacoustic imaging [O] . Zhaohui Wang, Seunghan Ha, Kang Kim -1

机译：用于深部组织光声成像的光照明方案的新设计
7. Laser line illumination scheme allowing the reduction of background signal and the correction of absorption heterogeneities effects for fluorescence reflectance imaging [O] . Fantoni, Frédéric, Hervé, Lionel, Poher, Vincent, 2015

机译：激光线照明方案可减少背景信号并校正荧光反射成像的吸收异质性效应
8. Development of An Integrated Proximity Effect Correction Scheme. [R] . Lee, S. 2001

机译：综合邻近效应校正方案的研制。

Effects of Advanced Illumination Schemes on Design Manufacturability and Interactions with Optical Proximity Corrections

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