【24h】

Planarization Approaches to Via-First Dual-Damascene Processing

机译:Via-First双镶嵌处理​​的平面化方法

获取原文
获取原文并翻译 | 示例

摘要

Via fill and intervia converage of AR5 and AR7 anti-reflectants were measured for 608nm deep vias in thermal oxide. Fitting functions were found which gave good agreement with experimental data (Rsq generally over 0.87). The most important factors were AR thickness, via duty ratio and via width. The importance of these factors was different for via fill and intervia converage, and for AR5 and AR7. AR7 was found to fill a range of vias (sizes from 200nm to 350nm, and pitches from 1:1 to semi-isolated) to a depth of 25
机译:对于热氧化物中608nm深的通孔,测量了AR5和AR7抗反射剂的通孔填充和通孔间平均值。发现拟合函数与实验数据具有很好的一致性(Rsq通常超过0.87)。最重要的因素是AR厚度,通孔占空比和通孔宽度。这些因素对于通孔填充和通孔间以及AR5和AR7的重要性不同。发现AR7可以填充一定范围的通孔(尺寸从200nm至350nm,间距从1:1到半隔离)

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号