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首页> 外文会议>Conference on Photomask and Next-Generation Lithography Mask Technology IX, Apr 23-25, 2002, Yokohama, Japan >Lithography technology trend for DRAM devices
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Lithography technology trend for DRAM devices

机译：DRAM设备的光刻技术趋势

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摘要

Lithography technology trend is described in view of DRAM devices. Lowering k_1 factor is a way to push the existing exposure tools further down to where an improved tool might take the place. Four different aspects have been studied to lower k_1 factor: resist and resist process, design layout, exposure tool, and complex mask. Thin resist, silicon containing bi-layer resist process, and chemical attaching process (CAP) allows low k_1 factor. In a low k_1 factor regime, the importance of a defect level control and CD shrinkage control is mentioned. A litho-friendly design proves to be very effective. From exposure tool point of view, flare effect and lens aberration effect are stressed along with proposing a customized OAI (COAT), which proves to be a good method to lower k_1 factor. A novel complex mask with heavy OPC features is introduced. If all or most of the techniques suggested above are realized, moving toward k_1 factor of 0.3 or below will come true. With the era of low k_1 factor of 0.3 or below, ArF lithography can be extended to a device generation of ～ 65 nm which F_2 lithography was thought to be used.
机译：光刻技术的发展趋势是针对DRAM设备进行描述的。降低k_1系数是一种将现有曝光工具进一步推向可能需要使用改进工具的方法。已经研究了四个不同方面来降低k_1因子：抗蚀剂和抗蚀剂工艺，设计布局，曝光工具和复杂掩模。薄抗蚀剂，含硅的双层抗蚀剂工艺以及化学附着工艺（CAP）允许低k_1系数。在低k_1因子方案中，提到了缺陷水平控制和CD收缩控制的重要性。光刻友好的设计被证明是非常有效的。从曝光工具的角度来看，强调眩光效果和镜头像差效果以及提出定制的OAI（COAT），这被证明是降低k_1系数的好方法。介绍了具有强大OPC功能的新型复杂面罩。如果实现了上面建议的所有或大多数技术，则将k_1系数调到0.3或更低将成为现实。随着k_1系数低至0.3或以下的时代，ArF光刻技术可以扩展到〜65 nm的器件世代，据认为可以使用F_2光刻技术。

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