Imaging Capability of Low-Energy Electron-Beam Proximity-Projection Lithography Toward the 70 nm Node

机译：低能电子束接近投影光刻技术对70 nm节点的成像能力

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摘要

The technological systematics for low-energy electron-beam proximity-projection lithography (LEEPL) is discussed with particular focuses on the key ingredients such as mask, resist and alignment. We have developed a mechanically rigid 1X stencil mask supported by a grid-work of struts, high-resolution chemically-amplified resists to be used for multi layer processes, and the accurate alignment method to overlay complementarily split patterns. The LEEPL beta machine as combined with these techniques was successfully used to demonstrate its imaging capability for the 70 nm node.

机译：讨论了低能电子束接近投影光刻技术（LEEPL）的技术体系，重点关注掩模，抗蚀剂和对准等关键成分。我们开发了一种机械刚性的1X模板掩模，该掩模由支撑架的网格支撑，用于多层工艺的高分辨率化学放大抗蚀剂，以及用于覆盖互补分割图案的精确对准方法。 LEEPL beta机器与这些技术的结合已成功用于证明其对70 nm节点的成像能力。

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来源
《Conference on Photomask and Next-Generation Lithography Mask Technology IX, Apr 23-25, 2002, Yokohama, Japan》|2002年|p.827-836|共10页
会议地点 Yokohama(JP)
作者
Hiroyuki Nakano; Kumiko Oguni; Shinichiro Nohdo; Kaoru Koike; Shigeru Moriya;
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作者单位

Lithography Technology Department, Sony Corporation Semiconductor Network Company 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014 Japan;

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会议组织
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
electron beam lithography; LEEPL; stencil mask; complementary alignment; multi layer resist process;

机译：电子束光刻； LEEPL;模具模板互补对齐多层抗蚀剂工艺;

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1. Sub-50 nm stencil mask for low-energy electron-beam projection lithography [J] . Masaki Yoshizawa Journal of Vacuum Science & Technology. B, Microelectronics Processing and Phenomena . 2002,第6期

机译：用于低能电子束投影光刻的亚50 nm模板掩模
2. Printing characteristics of proximity x-ray lithography and comparison with optical lithography at 100 and 70 nm technology nodes [J] . M.Hasegawa, Y.Nakayama, K.Yamaguchi Journal of Vacuum Science & Technology. B . 2001,第1期

机译：邻近X射线光刻的印刷特性以及在100和70 nm技术节点上与光学光刻的比较
3. Simulation of the 45-nm half-pitch node with 193-nm immersion lithography-imaging interferometric lithography and dipole illumination [J] . Abani Biswas, Steven R. J. Brueck Journal of Microlithography, Microfabrication, and Microsystems. (JM3) . 2004,第1期

机译：用193nm浸没式光刻成像干涉光刻和偶极子照明对45nm半节距节点进行仿真
4. Imaging Capability of Low-Energy Electron-Beam Proximity-Projection Lithography Toward the 70 nm Node [C] . Hiroyuki Nakano, Kumiko Oguni, Shinichiro Nohdo, Conference on photomask and next-generation lithography mask technology . 2002

机译：低能电子束接近投影光刻朝向70nm节点的成像能力
5. Fabrication and evaluation of devices containing high K gate dielectrics and metal gate electrodes for the 70 and 50NM technology nodes of ITRS. [D] . Suh, YouSeok. 2003

机译：ITRS 70和50NM技术节点的包含高K栅极电介质和金属栅电极的器件的制造和评估。
6. In Situ Study of the Impact of Aberration-Corrected Electron-Beam Lithography on the Electronic Transport of Suspended Graphene Devices [O] . Naomi Mizuno, Fernando Camino, Xu Du 2020

机译：像差校正电子束光刻对悬浮石墨烯器件电子传输的影响的原位研究
7. Impact of polarized illumination on high NA imaging in ArF immersion lithography at 45nm node [O] . Qiongyan Yuan, Xiangzhao Wang, Zicheng Qiu 2009

机译：偏振照明对45nm节点ArF浸没光刻法中高NA成像的影响

Imaging Capability of Low-Energy Electron-Beam Proximity-Projection Lithography Toward the 70 nm Node

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