• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Conference on Quantum Dots, Nanoparticles, and Nanoclusters; 20040126-20040127; San Jose,CA; US >Growth of self-assembled InAs quantum dots for InP- based heterostructures
【24h】

Growth of self-assembled InAs quantum dots for InP- based heterostructures

机译：基于InP的异质结构的自组装InAs量子点的生长

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

There has been great technological interest in the use of InAs quantum dots for InP- based lasers which can provide long wavelength emission in the 1.55 -2 μm range. The atom-like densities of states of quantum dots provide low threshold current density, high differential gain, temperature insensitive operation and low chirp. However, to take advantage of these aspects, it is important to have dots with uniform size and shape. We report the atomic force microscopy (AFM) and photoluminescence (PL) studies of self organized InAs quantum dots grown by molecular beam epitaxy on InGaAs and InAlAs layers lattice matched to InP. Our experiments confirm prior results that InAs forms quantum wires on InGaAs matrix layer. However, we find that depositing a thin buffer layer of InAlAs helps in the formation of well-shaped quantum dots. We believe that aluminum in the buffer layer reduces the surface diffusion of indium adatoms and aids the formation of dots with high density. Our results show that formation of quantum dots depends strongly on the strain, surface energy and surface diffusion kinetics that are in turn dependent on the nature of buffer layer and growth conditions. We improve the quality of dots by optimizing the growth parameters such as growth temperature and arsenic overpressure.
机译：在InP基激光器中使用InAs量子点引起了极大的技术兴趣，它可以提供1.55 -2μm范围内的长波长发射。量子点状态的原子状密度提供了低阈值电流密度，高差分增益，温度不敏感操作和低线性调频。然而，为了利用这些方面，重要的是具有均匀大小和形状的点。我们报告原子力显微镜（AFM）和光致发光（PL）研究分子束外延在InGaAs和与InP晶格匹配的InAlAs层上生长的自组织InAs量子点。我们的实验证实了先前的结果，即InAs在InGaAs基质层上形成量子线。但是，我们发现沉积一层薄的InAlAs缓冲层有助于形成形状良好的量子点。我们认为，缓冲层中的铝减少了铟原子的表面扩散，并有助于形成高密度的点。我们的结果表明，量子点的形成在很大程度上取决于应变，表面能和表面扩散动力学，而动力学又取决于缓冲层的性质和生长条件。我们通过优化生长参数（例如生长温度和砷超压）来提高点的质量。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号