RADIATION HARD 0.25 MICRON CMOS LIBRARY AT IHP

机译：IHP的辐射硬0.25微米CMOS库

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

To support space applications we have produced arntest chip with our in house 0.25 micron BiCMOSTechnology.rnThen the chips were radiated andrnmeasured. During measurements no thresholdrnvoltage shift and no single event latchup (SEL) werernobtained up to a level of 200 krad. As conclusion ofrnthe measurement we developed new radiation hardrndesign rules and according to these rules we createdrna new radiation hard CMOS library. With this newrnlibrary we produced a Leon3 chip with triplernmodule redundancy. Single event upsets did occur.rnTherefore we upgrade the library to make the fliprnflops more resistant against single event upsetrn(SEU) by adding two p-MOS transistors.

机译：为了支持太空应用，我们使用内部0.25微米BiCMOS技术生产了arntest芯片。然后对芯片进行辐射和测量。在测量期间，没有达到200 krad的水平的阈值电压偏移和单事件闩锁（SEL）。作为测量的结论，我们开发了新的辐射硬设计规则，并根据这些规则创建了新的辐射硬CMOS库。通过这个新库，我们生产了具有三重模块冗余的Leon3芯片。确实发生了单事件翻转。因此，我们通过添加两个p-MOS晶体管来升级库，以使触发器更能抵抗单事件翻转（SEU）。

著录项

来源
《DASIA 2008 - DAta Systems In Aerospace》|2008年|p.1-3|共3页
会议地点 Palma de Majorca(ES)
作者
Ulrich Jagdhold;
展开▼
作者单位

IHP, Im Technologiepark 25, 15236 Frankfurt(Oder), Germany, Email: Jagdhold@ihp-microelectronics.com;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类航空、航天;
关键词

相似文献

外文文献
中文文献
专利

1. CLARO-CMOS: a fast, low power and radiation-hard front-end ASIC for single-photon counting in 0.35micron CMOS technology [J] . M. Andreotti, W. Baldini, R. Calabrese, Journal of instrumentation: an IOP and SISSA journal . 2015,第1期

机译：CLARO-CMOS：一种快速，低功耗，抗辐射能力强的前端ASIC，用于采用0.35微米CMOS技术的单光子计数
2. Radiation hardness tests and characterization of the CLARO-CMOS, a low power and fast single-photon counting ASIC in 0.35 micron CMOS technology [J] . M. Fiorini, M. Andreotti, W. Baldini, Nuclear Instruments & Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment . 2014,第deca1期

机译：0.35微米CMOS技术的低功耗，快速单光子计数ASIC CLARO-CMOS的辐射硬度测试和表征
3. Long-term annealing of a radiation-hardened 1.0 micron bulk CMOS process [J] . Rudeck P.J. IEEE Transactions on Nuclear Science . 1992,第6期

机译：辐射硬化的1.0微米体CMOS工艺的长期退火
4. RADIATION HARD 0.25 MICRON CMOS LIBRARY AT IHP [C] . DAta Systems In Aerospace . 2008

机译：IHP的辐射硬0.25微米CMOS库
5. Radiation -tolerant design with 0.18-micron CMOS technology [D] . Chen, Li 2004

机译：采用0.18微米CMOS技术的耐辐射设计
6. Ultra-Low Power High Temperature and Radiation Hard Complementary Metal-Oxide-Semiconductor (CMOS) Silicon-on-Insulator (SOI) Voltage Reference [O] . El Hafed Boufouss, Laurent A. Francis, Valeriya Kilchytska, 2013

机译：超低功率高温和辐射硬互补金属氧化物半导体（CMOS）绝缘体上硅（SOI）电压基准
7. CLARO-CMOS: a fast, low power and radiation-hard front-end ASIC for single-photon counting in 0.35 micron CMOS technology [O] . M. Andreotti, W. Baldini, R. Calabrese, 2015

机译：CLaRO-CmOs：快速，低功耗和抗辐射的前端asIC，用于0.35微米CmOs技术的单光子计数
8. Three Micron CMOS Technology for Custom High Reliability and Radiation-Hardened Integrated Circuits [R] . Nordstrom, T. V., Light, R. W., Sexton, F. W. 1983

机译：用于定制高可靠性和抗辐射集成电路的三种微米CmOs技术

RADIATION HARD 0.25 MICRON CMOS LIBRARY AT IHP

摘要

著录项

相似文献

相关主题

期刊订阅