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首页> 外文会议>Electrochemical Society Meeting and International Symposium on ULSI Process Integration III; 20030428-20030502; Paris; FR >FLASH MEMORY TECHNOLOGY EVOLUTION
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FLASH MEMORY TECHNOLOGY EVOLUTION

机译：闪存技术的发展

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The most relevant phenomenon of this last decade in the field of semiconductor memories has been the explosive growth of the Flash memory market, driven by cellular phones and other types of electronic portable equipments (palm top, mobile PC, mp3 audio player, digital camera and so on). Moreover, in the coming years portable systems will ask even more non volatile memories either with high density and very high writing throughput for data storage application, or with fast random access for code execution in place. Although in the past different type of Flash cells and architectures have been proposed, today two of them can be considered as industry standard: the common ground NOR Flash, that due to its versatility is addressing both the code and data storage segments, and the NAND Flash, optimized for the data storage market. This paper is mainly focused on the development of the NOR Flash memory technology, with the aim of describing both the basic functionality of the memory cell used so far and the main cell architecture today consolidated. The main reliability issues, like charge retention and endurance, are discussed. Furthermore an insight into the multilevel approach, where two bits are stored in the same cell is presented. In fact the exploitation of the multilevel approach at each technology node allow the increase of the memory efficiency, about doubling the density at the same chip size, enlarging the application range and reducing the cost per bit. Finally the NOR Flash cell scaling issues is covered, pointing out the main challenges.
机译：在过去的十年中，半导体存储器领域最相关的现象是闪存市场的爆炸性增长，其受到蜂窝电话和其他类型的电子便携式设备（掌上电脑，移动PC，mp3音频播放器，数码相机和依此类推）。而且，在未来几年中，便携式系统将要求更多的非易失性存储器，它们要么具有高密度和非常高的写入吞吐量以用于数据存储应用，要么具有快速随机访问以实现适当的代码执行。尽管过去已经提出了不同类型的闪存单元和体系结构，但如今它们中的两个可以被视为行业标准：通用接地的NOR闪存，由于其多功能性可同时满足代码和数据存储段的需求，以及NAND闪存，针对数据存储市场进行了优化。本文主要侧重于NOR闪存技术的发展，目的是描述到目前为止所使用的存储单元的基本功能以及如今整合的主要单元架构。讨论了主要的可靠性问题，例如电荷保持性和耐久性。此外，还介绍了对多级方法的了解，该方法将两个位存储在同一单元中。实际上，在每个技术节点上采用多级方法都可以提高存储效率，在相同芯片尺寸下，密度大约翻倍，从而扩大了应用范围，并降低了每位成本。最后讨论了NOR Flash单元缩放问题，指出了主要挑战。

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