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首页> 外文会议>Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing IV >Proximity correction of high-dosed frame with PROXECCO
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Proximity correction of high-dosed frame with PROXECCO

机译：用PROXECCO校正高剂量框架

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摘要

Abstract: Usefulness of electron beam lithography is strongly related to the efficiency and quality of methods used for proximity correction. This paper addresses the above issue by proposing an extension to the new proximity correction program PROXECCO. The combination of a framing step with PROXECCO produces a pattern with a very high edge accuracy and still allows usage of the fast correction procedure. Making a frame with a higher dose imitates a fine resolution correction where the coarse part is disregarded. So after handling the high resolution effect by means of framing, an additional coarse correction is still needed. Higher doses have a higher contribution to the proximity effect. This additional proximity effect is taken into account with the help of the multi-dose input of PROXECCO. The dose of the frame is variable, depending on the deposited energy coming from backscattering of the proximity. Simulation proves the very high edge accuracy of the applied method. !4
机译：摘要：电子束光刻的实用性与用于近程校正的方法的效率和质量密切相关。本文通过提议对新的接近校正程序PROXECCO进行扩展来解决上述问题。取景步骤与PROXECCO的组合可产生具有非常高的边缘精度的图案，并且仍然允许使用快速校正程序。制作具有较高剂量的框架可模仿精细分辨率校正，而忽略了粗糙部分。因此，在通过成帧处理高分辨率效果之后，仍然需要进行额外的粗校正。较高的剂量对邻近效应有较高的贡献。借助PROXECCO的多剂量输入，可以考虑到这种额外的接近效果。框架的剂量是可变的，取决于来自邻近点的反向散射的沉积能量。仿真证明了该方法具有很高的边缘精度。 ！4

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