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首页> 外文会议>Fifth International Symposium on Semiconductor Wafer Bonding, 5th, Oct 1999, Honolulu >EFFECT OF O_2 PLASMA PRETREATMENT ON THE BONDING BEHAVIOR OF SILICON (100) WAFERS
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EFFECT OF O_2 PLASMA PRETREATMENT ON THE BONDING BEHAVIOR OF SILICON (100) WAFERS

机译：O_2等离子体预处理对硅（100）晶圆键合行为的影响

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摘要

O_2 plasma treatment prior to the bonding of hydrophilic silicon wafers can improve the bonding energy at low temperatures (up to 500℃). This effect, however, seems to depend on the pretreatment of the wafer prior and after the exposure to a plasma. Therefore, we have joined the following pairs: RCA cleaned to RCA cleaned, RCA cleaned to plasma treated, and plasma treated to plasma treated silicon wafers. Investigations by infrared transmission spectroscopy have revealed similar spectra for all wafer pairs. However, the intensities of the interfacial absorption bands of the oxide, the water and the hydroxyl groups are different for the various bonding combinations. Obviously, the plasma treatment forms a more thermal-like surface oxide with fewer hydroxyl groups than present on RCA cleaned hydrophilic surfaces. Therefore, the bonding behavior and the characteristics of O_2 plasma treated silicon wafers are assumed to be more complex compared to usual silicon wafer bonding
机译：在亲水硅晶片键合之前进行O_2等离子体处理可以改善低温（最高​​500℃）下的键合能量。然而，这种效果似乎取决于晶片在暴露于等离子体之前和之后的预处理。因此，我们加入了以下对：RCA清洗至RCA清洗，RCA清洗至等离子体处理，以及等离子体处理至等离子体处理的硅晶片。通过红外透射光谱法的研究已经揭示了所有晶片对的相似光谱。然而，对于各种键组合，氧化物，水和羟基的界面吸收带的强度是不同的。显然，与RCA清洗后的亲水性表面相比，等离子体处理形成的热态表面氧化物具有更少的羟基。因此，与常规的硅片键合相比，O_2等离子体处理的硅片的键合行为和特性被认为更为复杂。

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