Defect investigations via positron annihilation spectroscopy on proton implanted silicon

机译：通过正电子an没光谱研究质子注入硅的缺陷

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In contrast to the well-known physics of conventional ion doping, the situation for proton doping seems to be quite different. The implantation of protons induces crystal damage in the silicon matrix. These defects occur along the entire implantation range and peak where the implanted hydrogen is finally thermalized and deposited. After an annealing step the defects are decorated by the hydrogen itself, thereby forming a donator complex. The microscopic nature of these complexes is still not well understood and is the subject of ongoing research.

机译：与常规离子掺杂的众所周知的物理学相反，质子掺杂的情况似乎完全不同。质子的注入在硅基质中引起晶体损伤。这些缺陷会在整个注入范围内发生，并在注入的氢最终被加热并沉积的峰值处发生。在退火步骤之后，缺陷被氢本身修饰，从而形成供体配合物。这些复合物的微观性质仍未被很好地理解，并且是正在进行的研究的主题。

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来源
《Gettering and defect engineering in semiconductor technology XIV》|2011年|p.319-324|共6页
会议地点 Loipersdorf(AT);Loipersdorf(AT)
作者
A.J.Schriefl; S. Sgouridis; W. Schustereder; W. Puff;
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作者单位

Graz University of Technology, Institute of Materials Science, Petersgasse 16, Austria;

Infineon Technologies Austria AG, Villach, Siemensstr. 2, Austria;

Infineon Technologies Austria AG, Villach, Siemensstr. 2, Austria,Graz University of Technology, Institute of Biomechanics, Kronesgasse 5/I, Austria;

Graz University of Technology, Institute of Materials Science, Petersgasse 16, Austria;

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会议组织
原文格式 PDF
正文语种 eng
中图分类半导体技术;
关键词
proton implantation; positron annihilation; silicon;

机译：质子注入正电子an灭硅;

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专利

1. Defect investigations via positron annihilation spectroscopy on proton implanted silicon [J] . Schriefl A.J., Sgouridis S., Schustereder W., Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2011,第Null期

机译：通过正电子an没光谱研究质子注入硅的缺陷
2. Positron-Annihilation-Spectroscopy Study of Proton-Induced Defects in Silicon [J] . V. I. Grafutin, O. V. Ilyukhina, G. G. Myasishcheva, Russian Microelectronics . 2005,第3期

机译：正电子Ann没能谱研究硅中质子诱导的缺陷
3. Vacancy-type defects in 6H-silicon carbide induced by He-implantation: a positron annihilation spectroscopy approach [J] . Zhu CY, Ling CC, Brauer G, Journal of Physics, D. Applied Physics: A Europhysics Journal . 2008,第19期

机译：氦注入引起的6H-碳化硅空位型缺陷：正电子an没光谱法
4. Defect investigations via positron annihilation spectroscopy on proton implanted silicon [C] . A. J. Schriefl, S. Sgouridis, W. Schustereder, International Biannual Meeting on Gettering and Defect Engineering in Semiconductor . 2011

机译：质子植入硅上正电子湮没光谱缺陷调查
5. Ion implantation damage in silicon dioxide studied with positron annihilation spectroscopy. [D] . Spooner, Marc. 1998

机译：用正电子an没光谱研究了二氧化硅中的离子注入损伤。
6. Measurements of Defect Structures by Positron Annihilation Lifetime Spectroscopy of the Tellurite Glass 70TeO2-5XO-10P2O5-10ZnO-5PbF2 (X = Mg Bi2 Ti) Doped with Ions of the Rare Earth Element Er3+ [O] . K. Pach, J. Filipecki, E. Golis, 2017

机译：掺有稀土元素Er3 +的碲化物玻璃70TeO2-5XO-10P2O5-10ZnO-5PbF2（X = MgBi2Ti）的正电子ni没寿命光谱法测量缺陷结构
7. The evolution of vacancy-type defects in silicon-on-insulator structures studied by positron annihilation spectroscopy [O] . Coleman Paul G, Nash Deborah, Edwardson Charlene J, 2011

机译：用正电子an没光谱研究绝缘体上硅结构中空位型缺陷的演变

Defect investigations via positron annihilation spectroscopy on proton implanted silicon

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