Defect investigations via positron annihilation spectroscopy on proton implanted silicon

Schriefl A.J.; Sgouridis S.; Schustereder W.; Puff W.

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Defect investigations via positron annihilation spectroscopy on proton implanted silicon

机译：通过正电子an没光谱研究质子注入硅的缺陷

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The microscopic nature of hydrogen decorated defect complexes created by proton implantation in silicon and subsequental annealing is not well understood yet. We investigated the defects and donator complexes using positron lifetime measurements and Doppler-broadening spectroscopy. In particular, the influence of variations in implantation dose, annealing temperature and annealing time on crystal defects were examined in Czochralski and in float zone silicon samples. Due to well known positron lifetimes in silicon an identification of certain defect complexes was possible.

机译：氢修饰的缺陷配合物的微观性质是由硅中的质子注入和随后的退火产生的，人们对此尚不了解。我们使用正电子寿命测量和多普勒扩展光谱学研究了缺陷和捐赠者的复合物。特别是，在切克劳斯基和浮区硅样品中检查了注入剂量，退火温度和退火时间变化对晶体缺陷的影响。由于硅中正电子的寿命众所周知，因此可以确定某些缺陷配合物。

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《Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena》 |2011年第null期|共6页
作者
Schriefl A.J.; Sgouridis S.; Schustereder W.; Puff W.;
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正文语种 eng
中图分类半导体物理学;
关键词
Positron annihilation; Proton implantation; Silicon;

机译：正电子an没;质子注入;硅;

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1. Defect investigations via positron annihilation spectroscopy on proton implanted silicon [J] . Schriefl A.J., Sgouridis S., Schustereder W., Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2011,第Null期

机译：通过正电子an没光谱研究质子注入硅的缺陷
2. Vacancy-type defects in 6H-silicon carbide induced by He-implantation: a positron annihilation spectroscopy approach [J] . Zhu CY, Ling CC, Brauer G, Journal of Physics, D. Applied Physics: A Europhysics Journal . 2008,第19期

机译：氦注入引起的6H-碳化硅空位型缺陷：正电子an没光谱法
3. Proton irradiation induced defects in T92 steels: An investigation by TEM and positron annihilation spectroscopy [J] . Zhao Dandan, Li Shilei, Wang Xitao, Nuclear Instruments & Methods in Physics Research. B, Beam Interactions with Materials and Atoms . 2019,第MARa1期

机译：质子辐照在T92钢中引起的缺陷：TEM和正电子an没光谱研究
4. Defect investigations via positron annihilation spectroscopy on proton implanted silicon [C] . A.J.Schriefl, S. Sgouridis, W. Schustereder, Gettering and defect engineering in semiconductor technology XIV . 2011

机译：通过正电子an没光谱研究质子注入硅的缺陷
5. Ion implantation damage in silicon dioxide studied with positron annihilation spectroscopy. [D] . Spooner, Marc. 1998

机译：用正电子an没光谱研究了二氧化硅中的离子注入损伤。
6. Measurements of Defect Structures by Positron Annihilation Lifetime Spectroscopy of the Tellurite Glass 70TeO2-5XO-10P2O5-10ZnO-5PbF2 (X = Mg Bi2 Ti) Doped with Ions of the Rare Earth Element Er3+ [O] . K. Pach, J. Filipecki, E. Golis, 2017

机译：掺有稀土元素Er3 +的碲化物玻璃70TeO2-5XO-10P2O5-10ZnO-5PbF2（X = MgBi2Ti）的正电子ni没寿命光谱法测量缺陷结构
7. The evolution of vacancy-type defects in silicon-on-insulator structures studied by positron annihilation spectroscopy [O] . Coleman Paul G, Nash Deborah, Edwardson Charlene J, 2011

机译：用正电子an没光谱研究绝缘体上硅结构中空位型缺陷的演变

Defect investigations via positron annihilation spectroscopy on proton implanted silicon

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