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首页> 外文会议>International Conference on Molecular Beam Epitaxy, 11th, Sep 11-15, 2000, Beijing, China >Mid-infrared GaInAsSb photodetector grown by solid source molecular beam epitaxy
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Mid-infrared GaInAsSb photodetector grown by solid source molecular beam epitaxy

机译：固体源分子束外延生长的中红外GaInAsSb光电探测器

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摘要

We report on the growth of two types of GaInAsSb detector structures by solid source molecular beam epitaxy. One structure is capped with an AlGaAsSb window layer, and the other is a conventional PIN detector. The fabrication and performance of detectors are also reported. As a result of suppression of surface recombination, the dark reverse saturate current for the detector capped with window is much lower than the other type of detector. Black body detectivity D_(bb)~* of the detector with an AlGaAsSb window is 5.0 x 10~8 cm Hz~(1/2)/W, and voltage responsivity R_v is 78 V/ W at 300 K. For detectors without window, D_(bb)~* is 5.1 x 10~8cmHz~(1/2)/W, and R_v is 37 V/W at 300 K. Relative spectral response is also measured. The peak response wavelength is 2.19 μm at room temperature.
机译：我们报告了通过固体源分子束外延生长的两种类型的GaInAsSb检测器结构。一种结构被AlGaAsSb窗口层覆盖，另一种结构是常规的PIN检测器。还报告了检测器的制造和性能。由于抑制了表面重组，盖有窗口的探测器的暗反向饱和电流比其他类型的探测器低得多。带有AlGaAsSb窗口的探测器的黑体探测灵敏度D_（bb）〜*为5.0 x 10〜8 cm Hz〜（1/2）/ W，在300 K时的电压响应R_v为78 V / W。对于没有窗口的探测器，D_（bb）〜*为5.1 x 10〜8cmHz〜（1/2）/ W，R_v为在300 K下的37 V / W。还测量了相对光谱响应。室温下的峰值响应波长为2.19μm。

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