Solid C_960) growth on hexagonal GaN (0001) surface

机译：六方氮化镓（0001）表面上的固态C_960）生长

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Growth of solid C_(60) thin film on a hexagonal GaN (0001) surface has been investigated. Epitaxial growth of the fcc C_(60) thin solid film has been achieved on a flat surface, while the polycrystalline C_(60) film has only been obtained on a rough surface. The results indicate that the epitaxial growth of single crystalline C_(60) layer on the h-GaN (0001) surface is very sensitive to the surface morphology, because of very weak van der Waals interaction between the C_(60) molecules and the chemically inactive h-GaN (0001) surface.

机译：研究了六方氮化镓（0001）表面上固态C_（60）薄膜的生长。 fcc C_（60）固体薄膜的外延生长已在平坦表面上实现，而多晶C_（60）薄膜仅在粗糙表面上获得了。结果表明，h-GaN（0001）表面上单晶C_（60）层的外延生长对表面形态非常敏感，这是因为C_（60）分子与化学反应之间的范德华相互作用非常弱无活性h-GaN（0001）表面。

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来源
《International Conference on Molecular Beam Epitaxy, 11th, Sep 11-15, 2000, Beijing, China》|2000年|p.829-833|共5页
会议地点 Beijing(CN)
作者
H. Takashima; M. Nakaya; A. Yamamoto; A. Hashimoto;
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作者单位

Faculty of Engineering, Department of Electrical and Electronics Engineering, Fukui University, Bunkyo 3-9-1, Fukui-shi, Fukui 910-8507, Japan;

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会议组织
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
growth models; growth from vapor; molecular beam epitaxy; nanomaterials; semiconducting materials; solar cells;

机译：增长模型；蒸气增长；分子束外延纳米材料半导体材料；太阳能电池;

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专利

1. Solid C_60 growth on hexagonal GaN (0001) surface [J] . H.Takashima, M.Nakaya, A.Yamamoto Journal of Crystal Growth . 2001,第期

机译：六方氮化镓（0001）表面上的固体C_60生长
2. Oriented growth of diamond on (0001) surface of hexagonal GaN [J] . Masato Oba, Takashi Sugino Diamond and Related Materials . 2001,第3a7期

机译：六角形GaN（0001）表面上金刚石的定向生长
3. Oriented growth of diamond on (0001) surface of hexagonal GaN [J] . Masato Oba, Takashi Sugino Diamond and Related Materials . 2001,第3aPta3期

机译：六角形GaN（0001）表面上金刚石的定向生长
4. Solid C_960) growth on hexagonal GaN (0001) surface [C] . A. Hashimoto, A. Yamamoto, M. Nakaya, International conference on molecular beam epitaxy . 2001

机译：固体C_960）六边形GaN（0001）表面上的生长
5. Growth, doping and characterization of GaN and AlGaN deposited on 6H-SiC(0001) substrates via metalorganic vapor phase epitaxy for microelectronic applications. [D] . Bremser, Michael D. 1997

机译：微金属应用中通过金属有机气相外延生长在6H-SiC（0001）衬底上的GaN和AlGaN的生长，掺杂和表征。
6. Modeling the Non-Equilibrium Process of the Chemical Adsorption of Ammonia on GaN(0001) Reconstructed Surfaces Based on Steepest-Entropy-Ascent Quantum Thermodynamics [O] . Akira Kusaba, Guanchen Li, Michael R. von Spakovsky, 2017

机译：基于最陡熵上升量子热力学模拟氨在GaN（0001）重构表面上化学吸附的非平衡过程
7. The structure and dynamics of GaN(0001) surface during HVPE GaN growth –ab initiostudy [O] . K. Stanislaw, P. Kempisty, P. Strak 2008

机译：HVPE GaN生长过程中GaN（0001）表面的结构和动态-Ab initioSozyy

Solid C_960) growth on hexagonal GaN (0001) surface

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