Low Sheet Resistance of High-dose Aluminum Implanted 4H-SiC Using (11-20) Face

机译：（11-20）面的高剂量铝注入4H-SiC的低薄层电阻

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High-dose aluminum (Al~+) implantation into 4H-SiC (11-20) has been investigated. Implantations were carried out at 500℃ or room temperature. Post-implantation annealing was performed in an Ar ambient at 1800℃ using a CVD reactor. In the case of room-temperature (RT) implantation into (11-20), a sheet resistance of 1.9 kΩ/sq. could be achieved by co-implantation with carbon ions. For 500℃ implantation, the lowest sheet resistance of 1.7 kΩ/sq. was obtained by increasing the Al~+ dose up to 6.0 x 10~(16) cm~(-2). The Hall-mobility (hole) differs in (11-20) and (0001). The mobility in (11-20) is 10 cm~2/Vs at RT, which is about 3 times higher than that in (0001).

机译：研究了向4H-SiC（11-20）中注入高剂量铝（Al〜+）。植入在500℃或室温下进行。使用CVD反应器在1800℃的Ar环境下进行注入后退火。在室温（RT）注入（11-20）的情况下，薄层电阻为1.9kΩ/ sq。可以通过与碳离子共注入来实现。对于500℃注入，最低薄层电阻为1.7kΩ/ sq。通过将Al〜+剂量增加到6.0 x 10〜（16）cm〜（-2）来获得。霍尔迁移率（孔）在（11-20）和（0001）中不同。在室温下（11-20）的迁移率是10 cm〜2 / Vs，是（0001）的3倍左右。

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《International Conference on Silicon Carbide and Related Materials 2003 pt.2(ICSCRM 2003); 20031005-20031010; Lyon; FR》|2003年|P.913-916|共4页
会议地点 Lyon(FR);Lyon(FR)
作者
Y. Negoro; K. Katsumoto; T. Kimoto; H. Matsunami; F. Schmid; G. Pensl;
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作者单位

Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo, Kyoto 615-8510, Japan;

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会议组织
原文格式 PDF
正文语种 eng
中图分类硅Si;
关键词
(11-20); hall effect; ion implantation; sheet resistance;

机译：（11-20）;霍尔效应;离子注入;薄层电阻;

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3. Laser-induced growth of large-area epitaxial graphene with low sheet resistance on 4H-SiC(0001) [J] . Liu Zhizhuang, Xu Qingfang, Zhang Chitengfei, Applied Surface Science . 2020,第Juna1期

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Low Sheet Resistance of High-dose Aluminum Implanted 4H-SiC Using (11-20) Face

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