首页> 外文OA文献 >Remarkable lattice recovery and low sheet resistance of phosphorus-implanted 4H-SiC (11(2)over-bar0)

【2h】

Remarkable lattice recovery and low sheet resistance of phosphorus-implanted 4H-SiC (11(2)over-bar0)

机译：注入磷的4H-SiC（11（2）over-bar0）具有显着的晶格恢复和低薄层电阻

页面导航

著录项
相似文献
相关主题

著录项

作者
Negoro Y; Miyamoto N; Kimoto T; Matsunami H;
展开▼
作者单位

展开▼
年度 2002
总页数
原文格式 PDF
正文语种 eng
中图分类

相似文献

外文文献
中文文献
专利

1. Growth and characterization of pendeo-epitaxial GaN(11(2)over-bar0) on 4H-SiC(11(2)over-bar0) substrates [J] . Wagner BP, Reitmeier ZJ, Park JS, Journal of Crystal Growth . 2006,第2期

机译：在4H-SiC（11（2）over-bar0）衬底上生长外延外延GaN（11（2）over-bar0）和表征
2. Effect of ion flux on recrystallization and resistance lowering in phosphorus-implanted (0001)-oriented 4H-SiC [J] . Xin G, Sun GS, Li JM, Chinese physics . 2005,第3期

机译：离子通量对注磷（0001）取向4H-SiC的再结晶和电阻降低的影响
3. Effect of ion flux on recrystallization and resistance lowering in phosphorus-implanted (0001)-oriented 4H-SiC [J] . Xin G, Sun GS, Li JM, Chinese physics . 2005,第3期

机译：离子通量对注磷（0001）取向4H-SiC的再结晶和电阻降低的影响
4. Low Sheet Resistance of High-dose Aluminum Implanted 4H-SiC Using (11-20) Face [C] . Y. Negoro, K. Katsumoto, T. Kimoto, International Conference on Silicon Carbide and Related Materials 2003 pt.2(ICSCRM 2003); 20031005-20031010; Lyon; FR . 2003

机译：（11-20）面的高剂量铝注入4H-SiC的低薄层电阻
5. Understanding and development of manufacturable screen-printed contacts on high sheet-resistance emitters for low-cost silicon solar cells. [D] . Hilali, Mohamed M. 2005

机译：了解和开发可用于低成本硅太阳能电池的高薄层电阻发射器上的可制造丝网印刷触点。
6. Dependence of lattice strain relaxation absorbance and sheet resistance on thickness in textured ZnO@B transparent conductive oxide for thin-film solar cell applications [O] . Kuang-Yang Kou, Yu-En Huang, Chien-Hsun Chen, 2016

机译：薄膜太阳能电池应用中织构化的ZnO @ B透明导电氧化物中晶格应变松弛吸光度和薄层电阻对厚度的依赖性
7. Effects of Annealing Conditions on Resistance Lowering of High- Phosphorus-Implanted 4H-SiC [O] . J. Senzaki, K. Fukuda, K. Arai 2016

机译：退火条件对高磷注入4H-siC电阻降低的影响

Remarkable lattice recovery and low sheet resistance of phosphorus-implanted 4H-SiC (11(2)over-bar0)

著录项

相似文献

相关主题

期刊订阅